On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

(2022) Ethan S. Lee et al.   APPLIED PHYSICS LETTERS

Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs

(2022) Huan Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

(2022) Jiarui Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact

(2021) Shaowen Han et al.   IEEE ELECTRON DEVICE LETTERS

Gallium nitride-based complementary logic integrated circuits

(2021) Zheyang Zheng et al.   Nature Electronics

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

(2021) Liuan Li et al.   IEEE SENSORS JOURNAL

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

(2021) Taofei Pu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

(2020) Xiaobo Li et al.   IEEE ELECTRON DEVICE LETTERS

Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias

(2020) Xi Tang et al.   APPLIED PHYSICS LETTERS

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

(2019) F. Masin et al.   APPLIED PHYSICS LETTERS

Asymmetric Bipolar Injection in a Schottky-Metal/${p}$ -GaN/AlGaN/GaN Device Under Forward Bias

(2019) Baikui Li et al.   IEEE ELECTRON DEVICE LETTERS

Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

(2019) Yaozong Zhong et al.   IEEE ELECTRON DEVICE LETTERS

Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs

(2019) Xuesong Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach

(2019) Chengmin Li et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

(2019) Zheyang Zheng et al.   IEEE ELECTRON DEVICE LETTERS

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

(2019) Xiaobo Li et al.   IEEE SENSORS JOURNAL

Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering

(2018) Ananth Saran Yalamarthy et al.   ADVANCED FUNCTIONAL MATERIALS

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

(2018) Luca Sayadi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Junction Temperature Control for More Reliable Power Electronics

(2018) Markus Andresen et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

(2018) Samuel James Bader et al.   IEEE ELECTRON DEVICE LETTERS

A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications

(2017) S. Madhusoodhanan et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions

(2015) Leny Baczkowski et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs

(2013) Sara Martin-Horcajo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Integrated Over-Temperature Protection Circuit for GaN Smart Power ICs

(2013) Alex Man Ho Kwan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

(2011) Yvan Avenas et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and Their Applications as Temperature Sensors

(2010) Abdeldjelil Habib Zahmani et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C

(2009) Z. H. Liu et al.   APPLIED PHYSICS LETTERS