Gallium nitride-based complementary logic integrated circuits

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

(2020) Samuel James Bader et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs

(2020) Han Xu et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

(2019) Samuel James Bader et al.   APPLIED PHYSICS LETTERS

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

(2019) Nadim Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform

(2019) Zheyang Zheng et al.   IEEE ELECTRON DEVICE LETTERS

A SiC CMOS Linear Voltage Regulator for High-Temperature Applications

(2019) Robert C. Murphree et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

(2018) Samuel James Bader et al.   IEEE ELECTRON DEVICE LETTERS

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

(2017) Gaofei Tang et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An Experimental Demonstration of GaN CMOS Technology

(2016) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C

(2016) S Amor et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

(2016) Ashfaqur Rahman et al.   IEEE Journal of Emerging and Selected Topics in Power Electronics

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

(2014) B Reuters et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Recessed-Gate Enhancement-Mode GaN MOSFETs With a Double-Insulator Gate Providing 10-MHz Switching Operation

(2013) Junichi Kashiwagi et al.   IEEE ELECTRON DEVICE LETTERS

High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation

(2013) Shu Yang et al.   IEEE ELECTRON DEVICE LETTERS

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

(2013) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

(2013) Injun Hwang et al.   IEEE ELECTRON DEVICE LETTERS

Reliability of CMOS on Silicon-on-Insulator for Use at 250 $^{\circ}\hbox{C}$

(2013) Katharina Grella et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

(2013) Herwig Hahn et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

(2012) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Enhancing hole mobility in III-V semiconductors

(2012) Aneesh Nainani et al.   JOURNAL OF APPLIED PHYSICS

Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

(2011) Mu-Tao Chu et al.   IEEE ELECTRON DEVICE LETTERS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE