Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Published 2018 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 12, Pages 1848-1851
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-10-06
DOI
10.1109/led.2018.2874190

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.