Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

Next generation ferroelectric materials for semiconductor process integration and their applications

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Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

(2021) Manh-Cuong Nguyen et al.   IEEE ELECTRON DEVICE LETTERS

Memory Technology – A Primer for Material Scientists

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A memory window expression to evaluate the endurance of ferroelectric FETs

(2020) Nicolò Zagni et al.   APPLIED PHYSICS LETTERS

Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

(2020) Kasidit Toprasertpong et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

(2020) Xiaolei Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES