A High‐Performance Ag/TiN/HfO x /HfO y /HfO x /Pt Diffusive Memristor for Calibration‐Free True Random Number Generator

12.7 MA/cm2 On-Current Density and High Uniformity Realized in AgGeSe/Al2O3 Selectors

(2021) Tian-Qing Wan et al.   IEEE ELECTRON DEVICE LETTERS

Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

(2021) Gwangmin Kim et al.   Nature Communications

A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption

(2020) Kyung Seok Woo et al.   Advanced Electronic Materials

Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing

(2020) Yi-Fan Lu et al.   IEEE ELECTRON DEVICE LETTERS

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

(2020) Hao‐Yang Li et al.   Advanced Electronic Materials

High-Throughput/Low-Energy MTJ-Based True Random Number Generator Using a Multi-Voltage/Current Converter

(2020) Naoya Onizawa et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

High‐Uniformity Threshold Switching HfO 2 ‐Based Selectors with Patterned Ag Nanodots

(2020) Yujia Li et al.   Advanced Science

Performance-Enhancing Selector via Symmetrical Multilayer Design

(2019) Yiming Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

(2019) Wei Wang et al.   Nature Communications

Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

(2019) Jae-Hyeun Park et al.   ACS Applied Materials & Interfaces

Physically Transient Memristive Synapse With Short-Term Plasticity Based on Magnesium Oxide

(2019) Jing Sun et al.   IEEE ELECTRON DEVICE LETTERS

Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications

(2019) Bingjie Dang et al.   IEEE ELECTRON DEVICE LETTERS

Stochastic Memory Devices for Security and Computing

(2019) Roberto Carboni et al.   Advanced Electronic Materials

GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

(2019) Zheng Chai et al.   IEEE ELECTRON DEVICE LETTERS

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

(2018) Xiaolong Zhao et al.   ADVANCED MATERIALS

Dual-Layer Selector With Excellent Performance for Cross-Point Memory Applications

(2018) Qi Lin et al.   IEEE ELECTRON DEVICE LETTERS

Highly Compact Artificial Memristive Neuron with Low Energy Consumption

(2018) Yishu Zhang et al.   Small

High-Entropy STT-MTJ-Based TRNG

(2018) Elena Ioana Vatajelu et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation

(2017) Enrico Piccinini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-speed true random number generation based on paired memristors for security electronics

(2017) Teng Zhang et al.   NANOTECHNOLOGY

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

(2017) Yu Li et al.   Small

A novel true random number generator based on a stochastic diffusive memristor

(2017) Hao Jiang et al.   Nature Communications

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Volatile and Non-Volatile Switching in Cu-SiO2Programmable Metallization Cells

(2016) W. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

(2016) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Spintronics and Security: Prospects, Vulnerabilities, Attack Models, and Preventions

(2016) Swaroop Ghosh   PROCEEDINGS OF THE IEEE

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

(2016) Gang Du et al.   AIP Advances

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

(2015) Simone Balatti et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

(2014) Haitao Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS