Article
Chemistry, Physical
Li Zhang, Zhenhua Tang, Junlin Fang, Xiujuan Jiang, Yan-Ping Jiang, Qi-Jun Sun, Jing-Min Fan, Xin-Gui Tang, Gaokuo Zhong
Summary: Artificial neural network-based computing has the potential to overcome the limitations of conventional computers and has a wide range of applications. By using NiO/Cu2O memristors to emulate biological synapses, the recognition accuracy of an artificial neural network based on synaptic weight modulation reached up to 96.84% on average, demonstrating the potential of artificial synapses in artificial intelligence systems.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Dayanand Kumar, Aftab Saleem, Lai Boon Keong, Amit Singh, Yeong Her Wang, Tseung-Yuen Tseng
Summary: In this study, the synaptic features of a transparent bilayer memristor for neuromorphic computing applications were investigated. The device exhibited stable synaptic characteristics, including potentiation and depression, as well as highly linear synaptic features. The bilayer transparent synapse also showed good retention property, multi-level cell characteristics, and high potential for future neuromorphic computing systems.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yaxiong Cao, Saisai Wang, Jiaxing Lv, Fanfan Li, Qi Liang, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao
Summary: This article proposes a fully physically transient volatile memristor with Mg as an active electrode, demonstrating threshold switching performance and biological synapse plasticity. The device is fabricated on biodegradable and biocompatible substrates using a water-assisted transfer printing method. The study highlights the significance of the fully transient volatile memristor in security neuromorphic computing and bio-integrated electronic systems.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Shuangshuang Han, Ting Ma, Hui Li, Jiale Wu, Rong Liu, Ruirui Cao, Fumin Li, Huilin Li, Chong Chen
Summary: This study develops a new photoferroelectric synapse using a composite material consisting of halide perovskite and organic ferroelectric material, and investigates the photoferroelectricity and synaptic plasticity. The results demonstrate that photoelectricity and ferroelectricity can reinforce each other in this composite material. The versatile synaptic behaviors of the nervous system are successfully simulated, and the learning function of the brain, including memory loss and recovery, is achieved.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Wei Xiao, Linbo Shan, Haitao Zhang, Yujun Fu, Yanfei Zhao, Dongliang Yang, Chaohui Jiao, Guangzhi Sun, Qi Wang, Deyan He
Summary: A light-controlled artificial synapse based on radiofrequency sputtered ZnO thin film with high photosensitivity has successfully emulated various synaptic functions of the human brain. Furthermore, a three-layer neural network utilizing backpropagation achieved high classification accuracy, while the performance of the device was mainly determined by oxygen vacancy defects and chemisorbed oxygen on the surface of the ZnO film.
Article
Chemistry, Multidisciplinary
Jianmin Zeng, Xinhui Chen, Shuzhi Liu, Qilai Chen, Gang Liu
Summary: In this study, an artificial synapse based on an organic memristor with adjustable conductance states was developed. The memristor exhibited long-term synaptic plasticity and was utilized in a neural network for handwritten digit recognition with high accuracy.
Article
Nanoscience & Nanotechnology
Tae Sung Lee, Changhwan Choi
Summary: Analog resistive switching properties using Ta2O5-based memristive devices were investigated, and by adding an ITO buffer layer to form a Pt/ITO/Ta2O5/Pt heterostructured double-layer device, more symmetrical potentiation and depression characteristics were achieved. The insertion of the ITO buffer layer improved linearity, symmetry, and stability of the analog resistive switching properties of Ta2O5-based memristors for artificial synapses.
Article
Materials Science, Ceramics
Yongyue Xiao, Xinjiang Wu, Yaoyao Jin, Guangsen Cao, Bei Jiang, Shanwu Ke, Cong Ye
Summary: A high-performance synaptic plasticity memristor based on Pt/HfO2/BiFeO3/HfO2/TiN structure was developed with excellent switching windows, uniformity, and durability achieved through N2 annealing treatment. The device demonstrated basic synaptic biomimetic function and was able to simulate handwritten digital image recognition using the MLP algorithm.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Hsin-Hsueh Lin, Chao-Cheng Lin, Chung-Ting Shih, Wen-Yueh Jang, Tseung-Yuen Tseng
Summary: In this study, a ferroelectric tunnel junction (FTJ) device with a W/MgO/HZO/TiN structure is fabricated to investigate the effect of MgO thickness on the FTJ properties of HZO films. The device with a 0.5 nm thick MgO insulating layer and annealing at 600 degrees C for 20 s exhibits a large memory window and stable endurance, making it suitable for multilevel states. Additionally, the device shows excellent nonlinearities for potentiation (P) and depression (D) in pulse measurements. By utilizing the conductance data of P and D as input in a simulated Hopfield neural network model, the device is trained to recognize 10 x 10-pixel size images with 100% accuracy in only 19 iterations. These results suggest that this FTJ device has high potential as an artificial synapse for future neuromorphic computing applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Junhyeong Park, Yuseong Jang, Jinkyu Lee, Soobin An, Jinsung Mok, Soo-Yeon Lee
Summary: Brain-inspired neuromorphic computing, using the parallel structure of synapses and neurons, is a promising technology beyond von Neumann architecture. This paper explores the use of indium-gallium-zinc-oxide (IGZO) synaptic transistors with a charge trapping layer (CTL) and finds that degenerating the CTL is crucial for improving the de-trapping efficiency. The experimental results demonstrate high linearity of potentiation and depression, with 64 conductance levels, enabling accurate spiking neural network simulations.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Zhi-Hao Shen, Wen-Hua Li, Xin-Gui Tang, Hao Chen, Jia Hu, Kai-Yuan Wang, Ke Meng, Yan-Ping Jiang, Xiao-Bin Guo
Summary: To overcome the limitations of the von Neumann architecture, scholars have proposed neuromorphic computing using artificial synapses and neural network algorithms. In this study, an artificial synapse based on Al-doped SrTiO3 (STAO) thin film was fabricated using a low-cost sol-gel method. The STAO device effectively emulated various synaptic functions and showed improved stability, linearity, and image recognition accuracy compared to SrTiO3 (STO) devices. The increase in oxygen vacancy content due to Al doping was identified as the main factor contributing to the improved performance.
Article
Nanoscience & Nanotechnology
Mohamed Soliman, Krishna Maity, Arnaud Gloppe, Aymen Mahmoudi, Abdelkarim Ouerghi, Bernard Doudin, Bohdan Kundys, Jean-Francois Dayen
Summary: Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures have potential for alternative device architectures, but further research is needed in optical and multistate control. This study demonstrates electrical and optical control of ferroelectric polarization states in FeFETs made of ReS2/hBN/CuInP2S6 vdW materials. The polarization of the CuInP2S6 layer can be controlled by photoexciting the vdW heterostructure. Heterosynaptic plasticity is observed, emulating key synaptic functionalities with high accuracy. These findings pave the way for future research on photoferroelectric vdW systems and their applications in neuromorphic computing architectures.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Review
Materials Science, Multidisciplinary
Kanghyeon Byun, Inhyuk Choi, Soonwan Kwon, Younghoon Kim, Donghoon Kang, Young Woon Cho, Seung Keun Yoon, Sangbum Kim
Summary: Nonvolatile memory (NVM)-based neuromorphic computing has attracted significant attention for its potential in energy-efficient analog computation. This review paper discusses recent advancements in synaptic devices that utilize NVM to improve linearity and symmetry, and also introduces circuit and algorithmic approaches to compensate for non-idealities in analog synaptic devices.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Nanoscience & Nanotechnology
Xuelian Zhang, Haohan Chen, Siqi Cheng, Feng Guo, Wenjing Jie, Jianhua Hao
Summary: This study investigates the resistive switching characteristics, synaptic functions, and neuromorphic computing of memristors based on two-dimensional MXene Ti3C2 nanosheets. The results show that both digital and analog resistive switching behaviors can coexist in these memristors depending on the magnitude of operation voltage. Additionally, the artificial synapses based on these memristors exhibit basic synaptic functions and successfully emulate the learning-forgetting experience. Moreover, the artificial synapses can be used to construct an artificial neural network for image recognition.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Md Mehedi Hasan Tanim, Zoe Templin, Kaleb Hood, Jun Jiao, Feng Zhao
Summary: This study reported a new natural organic memristor based artificial synaptic device using a honey and carbon nanotube admixture. Various microscopy and spectroscopy techniques were used to analyze the morphology and chemical structure of the device. The honey-CNT memristor emulated various synaptic functionalities and showed promise for energy-efficient and eco-friendly neuromorphic systems.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Physics, Multidisciplinary
Jingshu Guo, Jiejie Zhu, Siyu Liu, Jielong Liu, Jiahao Xu, Weiwei Chen, Yuwei Zhou, Xu Zhao, Minhan Mi, Mei Yang, Xiaohua Ma, Yue Hao
Summary: This paper investigated the low-resistance ohmic contacts on InAlN/GaN using metal-organic chemical vapor deposition (MOCVD) regrowth technique. The regrown n(+)-InGaN showed a low sheet resistance of 31 Omega/rectangle and an extremely low contact resistance of 0.102 Omega.mm between n(+)-InGaN and InAlN/GaN channels. The mask-free regrowth process significantly improved the sheet resistance of InAlN/GaN. Furthermore, the diffusion mechanism between n(+)-InGaN and InAlN during regrowth process was studied, which could contribute to further process optimization.
Article
Chemistry, Physical
Yuehua Hong, Xuefeng Zheng, Yunlong He, Zijian Yuan, Xiangyu Zhang, Fang Zhang, Hao Zhang, Xiaoli Lu, Xiaohua Ma, Yue Hao
Summary: NiOx/Ga2O3 heterostructure is widely used in Ga2O3 electronics devices for high power density and severe ambient temperature. The heat effect on band offsets in NiOx/Ga2O3 junction is investigated using in-situ temperature-dependent XPS characterization technique. The conduction band offset (Delta Ec) and valence band offset (Delta Ev) decrease with increasing temperature, indicating an advancement in suppression of band bending. The temperature dependence of I-V measurement of NiOx/Ga2O3 pn diode is also studied to verify the findings from XPS analysis. The work provides insights into interfacial properties and offers suggestions for designing Ga2O3 power electronics.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Environmental
Chao Ye, Chen Luo, Wenhui Ji, Yatao Weng, Jianxin Li, Shouliang Yi, Xiaohua Ma
Summary: This study successfully tailored the ultra-microporosity and gas separation properties of polymer and carbon molecular sieve membranes using a bromination/debromination method, providing new insights for the design of high-performance industrial gas separation membranes.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Physics, Multidisciplinary
Peng Zhang, Miao Li, Jun-Wen Chen, Jia-Zhi Liu, Xiao-Hua Ma
Summary: This paper proposes a self-supporting T-shaped gate (SST-gate) GaN device and process using electron beam lithography. An AlGaN/GaN high-electron-mobility transistor (HEMT) device with a gate length of 100 nm is fabricated by this method. The device achieves a current gain cutoff frequency (f (T)) of 60 GHz and a maximum oscillation frequency (f (max)) of 104 GHz. Compared with the traditional floating T-shaped gate (FT-gate) device, the current collapse improves by 13% at a static bias of (V (GSQ), V (DSQ)) = (-8 V, 10 V), and the gate manufacturing yield improves by 17%.
Article
Engineering, Electrical & Electronic
Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Mei Wu, Bin Hou, Fuchun Jia, Fei Guo, Xiaohua Ma, Yue Hao
Summary: This letter reports the use of AlGaN/GaN/gradedAlGaN:Si-doped/GaN double channel (GDC-SI) high electron mobility transistors (HEMTs) for low voltage applications, which exhibit high saturation current density and linearity. The GDC-SI HEMTs outperform the standard AlGaN/GaN/AlGaN/GaN double channel GaN (SDC) HEMTs in terms of saturation current, transconductance profile, transconductance derivatives, and on resistance. The Si-doped graded bottom barrier in GDC-SI HEMTs leads to flatter current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) characteristics as bias voltage increases. The GDC-SI HEMTs achieve an output power density of 0.75 W/mm and a power added efficiency (PAE) of 58% at a drain voltage of 7 V and a test frequency of 3.6 GHz. Furthermore, they demonstrate an output third-order intercept point (OIP3) of 39.3 dBm and a saturation current density of 1909 mA/mm, which represent the state-of-the-art performance in double-channel GaN HEMTs.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yuwei Zhou, Minhan Mi, Yutong Han, Pengfei Wang, Yilin Chen, Jielong Liu, Can Gong, Mei Yang, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao
Summary: A high-efficiency InAlN/GaN HEMT with recess and oxidation process under the gate (RAO) was fabricated for low-voltage RF applications. RAO-HEMT showed a significant decrease in gate leakage and suppressed RF dispersion compared to conventional HEMT. It also achieved higher power-added-efficiency and output power, making it a promising choice for low-voltage low-power consumption RF applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Yilin Chen, Jielong Liu, Yutong Han, Sirui An, Siyin Guo, Meng Zhang, Qing Zhu, Mei Yang, Xiaohua Ma, Yue Hao
Summary: In this work, a high-performance InAlN/GaN HEMT based on the regrown ohmic contact with n(+)GaN contact ledge structure is proposed. The n(+)GaN regrowth and self-stopping etching are used to form the regrown ohmic contact, which reduces the total ohmic contact resistance and forms the n(+)GaN contact ledge structure. The presence of the contact ledge structure shortens the effective drain-source distance and further reduces the parasitic resistance.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Materials Science, Multidisciplinary
Yaxiong Cao, Saisai Wang, Rui Wang, Yuhan Xin, Yaqian Peng, Jing Sun, Mei Yang, Xiaohua Ma, Ling Lv, Hong Wang, Yue Hao
Summary: In this study, a fully biocompatible and biodegradable threshold switching (TS) memristor was proposed as an artificial nociceptor. The device exhibited stable electrical performance even under bending conditions. Important nociceptor behaviors were successfully demonstrated, and an optoelectronic nociceptor system was built. The devices, made on a biodegradable substrate, could completely dissolve in deionized water, mimicking the decomposition of necrotic tissue. This research provides a novel approach for developing fully biocompatible and biodegradable artificial nociceptors for applications in implantable and wearable electronics and bio-integrated systems.
SCIENCE CHINA-MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Jingshu Guo, Jiejie Zhu, Siyu Liu, Kai Cheng, Qing Zhu, Pengfei Wang, Kai Liu, Ziyue Zhao, Lingjie Qin, Yuxi Zhou, Minhan Mi, Yue Hao, Xiaohua Ma
Summary: In this work, high-performance tri-gate normally-off HEMTs RF power devices using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures are presented. The devices exhibit excellent characteristics, such as low contact resistance, low threshold-voltage, high output current, and high peak power added efficiency. The demonstrated SiN/AlN/GaN epi-structures and trigate normally-off HEMTs show promising potential for various applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yaxiong Cao, Saisai Wang, Rui Wang, Jing Sun, Mei Yang, Xiaohua Ma, Hong Wang, Yue Hao
Summary: This article proposes a physically transient artificial neuron based on TS devices, which has fast switching speed and high switching endurance, and successfully emulates the key functions of a biological neuron. In addition, the device can disintegrate completely after being soaked in DI water at RT for 40 min, paving the way for applications in secure neuromorphic computing, biointegrated electronics, and human-machine interfaces.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Ailing Pan, Yingzhe Wang, Xuefeng Zheng, Yuehua Hong, Fang Zhang, Xiangyu Zhang, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao
Summary: The transformation of current transport mechanism and defect behavior in beta-gallium oxide Schottky barrier diodes (SBDs) under constant forward bias stress is investigated in this study. It is found that the predominant transport mechanism for both forward and reverse leakage current changes from thermionic emission to trap-assisted tunneling after stress. The generation of shallow-level defects and ionization of newly generated shallow donors contribute to the enhancement of trap-assisted tunneling.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Shaozhong Yue, Xuefeng Zheng, Yuehua Hong, Xiangyu Zhang, Fang Zhang, Yingzhe Wang, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao
Summary: This article studies the effect of hydrogen on b-gallium oxide (Ga2O3) (001) Schottky barrier diode (SBD) device for the first time. It is found that the electrical performance of the beta-Ga2O3 SBDs changed significantly after hydrogen treatment, with a decrease in turn-on voltage (V-on) by 0.3 V and an increase in forward (JF) current density by 28%. Frequency-dependent conductance technique reveals that the time constants decreased from 0.09-0.3 to 0.06-0.09 mu s after hydrogen treatment. The density of interface states and trap activation energy also decreased after hydrogen treatment. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) shows an increased density of hydrogen at the Pt/Ga2O3 interface for the device with hydrogen treatment. The effect of hydrogen on Pt/Au beta-Ga2O3 SBDs is mainly attributed to the passivation of traps by hydrogen atoms near the Pt/Ga2O3 interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yuwei Zhou, Minhan Mi, Can Gong, Pengfei Wang, Xinyi Wen, Yilin Chen, Jielong Liu, Mei Yang, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao
Summary: In this work, a high-efficiency millimeter-wave enhancement-mode (E-mode) Fin-HEMT is fabricated on an in situ SiN passivated ultrathin-barrier AlGaN/GaN heterojunction, which offers positive threshold voltage and reduced knee voltage, as well as suppressed leakage current and high breakdown voltage. The fabricated Fin-HEMT exhibits good stability and achieves a high power added efficiency (PAE) at 30 GHz and V-DS of 6 V, demonstrating the potential of this configuration for low-voltage terminal applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Condensed Matter
Hao Zhang, Xuefeng Zheng, Xiaohu Wang, Tian Zhu, Yingzhe Wang, Xiaohua Ma, Yue Hao
Summary: In this study, the degradation of AlGaN/GaN MIS-HEMTs under reverse gate stress was investigated. It was found that the origin of the threshold voltage shift (Delta VTH) is not due to the barrier layer defect, but is closely related to the gate dielectric layer. Two types of trap states (traps A and B) with different properties in the gate dielectrics of AlGaN/GaN MIS-HEMTs were proposed and studied. Trap A is associated with a transient precursor defect, while trap B has permanent characteristics and is newly generated during the stress, leading to permanent degradation and breakdown. Furthermore, the capture cross sections of traps A and B were extracted based on the measurement results of Delta VTH and injected-electron density (Ninj), which are 5.52 x 10-21cm2 and 1.38 x 10-22cm2, respectively.
MICRO AND NANOSTRUCTURES
(2023)
Article
Horticulture
Xiaohua Ma, Qin Zhou, Qingdi Hu, Xule Zhang, Jian Zheng, Renjuan Qian
Summary: This study analyzed the effects of light intensity on Clematis tientaiensis and found that high light intensity caused chlorosis and reduced photosynthetic efficiency, while moderate light conditions resulted in good adaptability. The results highlight the importance of proper light management for the growth and population expansion of Clematis tientaiensis.
