Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model

Title
Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 6, Pages 065701
Publisher
AIP Publishing
Online
2016-02-09
DOI
10.1063/1.4941387

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