Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model
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Title
Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 119, Issue 6, Pages 065701
Publisher
AIP Publishing
Online
2016-02-09
DOI
10.1063/1.4941387
References
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Related references
Note: Only part of the references are listed.- Investigations on accelerated processes for the boron–oxygen defect in p-type Czochralski silicon
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- Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon
- (2015) N. Nampalli et al. APPLIED PHYSICS LETTERS
- A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon
- (2015) Chang Sun et al. JOURNAL OF APPLIED PHYSICS
- Accelerated formation of the boron-oxygen complex in p-type Czochralski silicon
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- Manipulation of Hydrogen Charge States for Passivation of P-Type Wafers in Photovoltaics
- (2014) P. Hamer et al. IEEE Journal of Photovoltaics
- Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon
- (2013) S. Wilking et al. JOURNAL OF APPLIED PHYSICS
- Direct monitoring of minority carrier density during light induced degradation in Czochralski silicon by photoluminescence imaging
- (2013) Tine Uberg Naerland et al. JOURNAL OF APPLIED PHYSICS
- Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon
- (2013) S. Wilking et al. JOURNAL OF APPLIED PHYSICS
- Light-induced degradation in indium-doped silicon
- (2013) Christian Möller et al. Physica Status Solidi-Rapid Research Letters
- Advanced Bulk Defect Passivation for Silicon Solar Cells
- (2013) Brett J. Hallam et al. IEEE Journal of Photovoltaics
- Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensation
- (2012) Peng Chen et al. JOURNAL OF APPLIED PHYSICS
- The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
- (2011) L. I. Murin et al. APPLIED PHYSICS LETTERS
- Kinetics of the boron-oxygen related defect in theory and experiment
- (2010) Axel Herguth et al. JOURNAL OF APPLIED PHYSICS
- Light-induced degradation in compensated n-type Czochralski silicon solar cells
- (2010) Thomas Schutz-Kuchly et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon
- (2010) D. Macdonald et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Deactivation of the boron–oxygen recombination center in silicon by illumination at elevated temperature
- (2008) Bianca Lim et al. Physica Status Solidi-Rapid Research Letters
- Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon
- (2007) A. Herguth et al. PROGRESS IN PHOTOVOLTAICS
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