Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon

Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

(2014) D. C. Walter et al.   APPLIED PHYSICS LETTERS

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

(2014) Svenja Wilking et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

(2013) S. Wilking et al.   JOURNAL OF APPLIED PHYSICS

Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon

(2013) S. Wilking et al.   JOURNAL OF APPLIED PHYSICS

Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening

(2012) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Improved quantitative description of Auger recombination in crystalline silicon

(2012) Armin Richter et al.   PHYSICAL REVIEW B

Accelerated deactivation of the boron–oxygen-related recombination centre in crystalline silicon

(2011) B Lim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline silicon

(2010) Bianca Lim et al.   JOURNAL OF APPLIED PHYSICS

Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon

(2007) A. Herguth et al.   PROGRESS IN PHOTOVOLTAICS