A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon

(2014) D. C. Walter et al.   APPLIED PHYSICS LETTERS

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

(2014) Chang Sun et al.   JOURNAL OF APPLIED PHYSICS

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

(2014) Svenja Wilking et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Manipulation of Hydrogen Charge States for Passivation of P-Type Wafers in Photovoltaics

(2014) P. Hamer et al.   IEEE Journal of Photovoltaics

Empirical determination of the energy band gap narrowing in highly doped n+ silicon

(2013) Di Yan et al.   JOURNAL OF APPLIED PHYSICS

Advanced Bulk Defect Passivation for Silicon Solar Cells

(2013) Brett J. Hallam et al.   IEEE Journal of Photovoltaics

Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening

(2012) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

(2008) D. Macdonald et al.   JOURNAL OF APPLIED PHYSICS

Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon

(2007) A. Herguth et al.   PROGRESS IN PHOTOVOLTAICS