Functionalized MoS2 Nanoribbons for Intrinsic Cold-Source Transistors: A Computational Study

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

(2021) Zhaowu Tang et al.   NANO LETTERS

Strain engineered C31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states

(2021) Qianwen Wang et al.   Applied Physics Express

Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS2

(2021) Qianwen Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

(2021) Shizhuo Ye et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

(2020) Wenhan Zhou et al.   Advanced Electronic Materials

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

(2020) Wenhan Zhou et al.   Physical Review Applied

Switching at Less Than 60 mV/Decade with a “Cold” Metal as the Injection Source

(2020) Fei Liu   Physical Review Applied

Toward high-performance monolayer graphdiyne transistor: Strain engineering matters

(2020) Pengpeng Sang et al.   APPLIED SURFACE SCIENCE

Negative-Capacitance FET With a Cold Source

(2020) Shujin Guo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

(2019) Demetrio Logoteta et al.   IEEE ELECTRON DEVICE LETTERS

QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

(2019) Søren Smidstrup et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

(2018) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Dirac Electrons at the Source: Breaking the 60-mV/Decade Switching Limit

(2018) Fei Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

(2018) Chenguang Qiu et al.   SCIENCE

Scalability assessment of Group-IV mono-chalcogenide based tunnel FET

(2018) Madhuchhanda Brahma et al.   Scientific Reports

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

(2018) Gwang Hyuk Shin et al.   ACS Applied Materials & Interfaces

Reconfigurable Electric Double Layer Doping in an MoS2 Nanoribbon Transistor

(2017) Cristobal Alessandri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Graphene Nanoribbon Tunnel Field-Effect Transistor via Segmented Edge Saturation

(2017) Yawei Lv et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

(2016) Jaesung Jo et al.   IEEE ELECTRON DEVICE LETTERS

Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices

(2016) Yawei Lv et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The chips are down for Moore’s law

(2016) M. Mitchell Waldrop   NATURE

Modulation of Electronic Structure of Armchair MoS2 Nanoribbon

(2015) Long Zhang et al.   Journal of Physical Chemistry C

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

Subthreshold-swing physics of tunnel field-effect transistors

(2014) Wei Cao et al.   AIP Advances

Electronic structures, field effect transistor and bipolar field-effect spin filtering behaviors of functionalized hexagonal graphene nanoflakes

(2013) J. Li et al.   CARBON

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Ab initiocalculations of edge-functionalized armchair graphene nanoribbons: Structural, electronic, and vibrational effects

(2011) Nils Rosenkranz et al.   PHYSICAL REVIEW B

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Armchair graphene nanoribbons: Electronic structure and electric-field modulation

(2008) Hassan Raza et al.   PHYSICAL REVIEW B