Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 32, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/32/1/014001
Keywords
diode; micro-hotplate; MEMS; MOSFET; annealing; Silicon-on-Insulator
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Funding
- Tunisian Ministry of Higher Education and Scientific Research
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In this work we investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from an experimental and analytical point of view. This study permits us to conclude the possibility of integrating electronic circuitry in the close vicinity of micro-heaters and hot operation transducers. A series of calibrations and measurements has been performed to examine the behaviors of transistors, inverters and diodes, actuated at high temperature, on a membrane equipped with an on-chip integrated micro-heater. The studied nand p-channel body-tied partially-depleted MOSFETs and CMOS inverter are embedded in a 5 mu m-thick membrane fabricated by back-side MEMS micromachining using SOI technology. It has been noted that a pre-stabilization step after the harsh post-CMOS processing, through an in situ high-temperature annealing using the micro-heater, is mandatory in order to stabilize the MOSFETs characteristics. The electrical characteristics and performance of the on-membrane MOS components are discussed when heated up to 335 degrees C. This study supports the possibility of extending the potential of the micro-hotplate concept, under certain conditions, by embedding more electronic functionalities on the interface of on-membrane-based sensors leading to better sensing and actuation performances and a total area reduction, particularly for environmental or industrial applications.
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