Intrinsic Electronic Transport Properties and Carrier Densities in PtS 2 and SnSe 2 : Exploration of n + ‐Source for 2D Tunnel FETs
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Intrinsic Electronic Transport Properties and Carrier Densities in PtS
2
and SnSe
2
: Exploration of n
+
‐Source for 2D Tunnel FETs
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume -, Issue -, Pages 2100292
Publisher
Wiley
Online
2021-08-05
DOI
10.1002/aelm.202100292
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
- (2020) Quanshan Lv et al. ADVANCED FUNCTIONAL MATERIALS
- Two-dimensional Noble-Metal Chalcogenides and Phosphochalcogenides
- (2020) Roman Kempt et al. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
- (2020) Seungho Kim et al. Nature Nanotechnology
- Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis
- (2020) Tianyi Zhang et al. ACS Nano
- Tuning Electrical Conductance of MoS2 Monolayers through Substitutional Doping
- (2020) Hui Gao et al. NANO LETTERS
- WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
- (2020) Nicolò Oliva et al. npj 2D Materials and Applications
- Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition
- (2019) Donghui Zhao et al. AIP Advances
- Strategy for Fabricating Wafer-Scale Platinum Disulfide
- (2019) Hongjun Xu et al. ACS Applied Materials & Interfaces
- Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor by UV-O3 treatment
- (2019) Wenlun Zhang et al. Applied Physics Express
- Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
- (2019) Satoshi Toyoda et al. Applied Physics Express
- Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructure
- (2019) Wei Li et al. ACS Applied Materials & Interfaces
- Tunable Negative Differential Resistance in van der Waals Heterostructures at Room Temperature by Tailoring the Interface
- (2019) Sidi Fan et al. ACS Nano
- MoS 2 /MoTe 2 Heterostructure Tunnel FETs Using Gated Schottky Contacts
- (2019) Yashwanth Balaji et al. ADVANCED FUNCTIONAL MATERIALS
- A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
- (2019) Zhen Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile
- (2019) Takahiro Gotow et al. JOURNAL OF APPLIED PHYSICS
- Lateral Heterostructures Formed by Thermally Converting n-Type SnSe2 to p-Type SnSe
- (2018) Zhen Tian et al. ACS Applied Materials & Interfaces
- Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping
- (2018) Kehao Zhang et al. ADVANCED FUNCTIONAL MATERIALS
- Band offset and electron affinity of MBE-grown SnSe2
- (2018) Qin Zhang et al. APPLIED PHYSICS LETTERS
- Two-dimensional electronic transport and surface electron accumulation in MoS2
- (2018) M. D. Siao et al. Nature Communications
- 2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+ -WSe2 Source
- (2018) Junyang He et al. Advanced Electronic Materials
- Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule
- (2018) Nan Fang et al. ACS Applied Materials & Interfaces
- Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture
- (2018) Zhongxun Guo et al. Advanced Science
- Complementary Black Phosphorus Tunneling Field-Effect Transistors
- (2018) Peng Wu et al. ACS Nano
- Vertical dielectric screening of few-layer van der Waals semiconductors
- (2017) Jahyun Koo et al. Nanoscale
- Multifunctional high-performance van der Waals heterostructures
- (2017) Mingqiang Huang et al. Nature Nanotechnology
- Substitutional Electron and Hole Doping of WSe2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling
- (2017) R. Mukherjee et al. Physical Review Applied
- Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
- (2016) Jian Gao et al. ADVANCED MATERIALS
- Extraordinarily Strong Interlayer Interaction in 2D Layered PtS2
- (2016) Yuda Zhao et al. ADVANCED MATERIALS
- Few-layer SnSe2 transistors with high on/off ratios
- (2016) Tengfei Pei et al. APPLIED PHYSICS LETTERS
- Field-effect transistors of high-mobility few-layer SnSe2
- (2016) Chenglei Guo et al. APPLIED PHYSICS LETTERS
- 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
- (2016) Tania Roy et al. APPLIED PHYSICS LETTERS
- Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
- (2016) Shuigang Xu et al. 2D Materials
- Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
- (2015) Tania Roy et al. ACS Nano
- Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap
- (2015) Takahiro Mori et al. APPLIED PHYSICS LETTERS
- Introduction to the Growth of Bulk Single Crystals of Two-Dimensional Transition-Metal Dichalcogenides
- (2015) Keiji Ueno JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- Fully dry PMMA transfer of graphene onh-BN using a heating/cooling system
- (2015) T Uwanno et al. 2D Materials
- Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)
- (2015) Mingda Oscar Li et al. IEEE Journal of the Electron Devices Society
- Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
- (2014) Joonki Suh et al. NANO LETTERS
- Tunability of Short-Channel Effects in MoS2 Field-Effect Devices
- (2014) Feng Zhang et al. NANO LETTERS
- Tunnel Field-Effect Transistors: State-of-the-Art
- (2014) Hao Lu et al. IEEE Journal of the Electron Devices Society
- Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
- (2013) Britton W. H. Baugher et al. NANO LETTERS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
- Low-Voltage Tunnel Transistors for Beyond CMOS Logic
- (2010) Alan C. Seabaugh et al. PROCEEDINGS OF THE IEEE
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search