Intrinsic Electronic Transport Properties and Carrier Densities in PtS 2 and SnSe 2 : Exploration of n + ‐Source for 2D Tunnel FETs
出版年份 2021 全文链接
标题
Intrinsic Electronic Transport Properties and Carrier Densities in PtS
2
and SnSe
2
: Exploration of n
+
‐Source for 2D Tunnel FETs
作者
关键词
-
出版物
Advanced Electronic Materials
Volume -, Issue -, Pages 2100292
出版商
Wiley
发表日期
2021-08-05
DOI
10.1002/aelm.202100292
参考文献
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