Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP2S6/MoS2 Van Der Waals Heterojunction
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP2S6/MoS2 Van Der Waals Heterojunction
Authors
Keywords
-
Journal
Nanomaterials
Volume 11, Issue 8, Pages 1971
Publisher
MDPI AG
Online
2021-08-02
DOI
10.3390/nano11081971
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices
- (2021) Zheng‐Dong Luo et al. ADVANCED MATERIALS
- Dual-gate MoS2 phototransistor with atomic-layer-deposited HfO2 as top-gate dielectric for ultrahigh photoresponsivity
- (2021) Xiao-Xi Li et al. NANOTECHNOLOGY
- Investigation of charge trapping mechanism in MoS2 field effect transistor by incorporating Al into host La2O3 as gate dielectric
- (2021) Kun Yang et al. NANOTECHNOLOGY
- Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
- (2020) Seungho Kim et al. Nature Nanotechnology
- Ultrasensitive negative capacitance phototransistors
- (2020) Luqi Tu et al. Nature Communications
- Resistive switching materials for information processing
- (2020) Zhongrui Wang et al. Nature Reviews Materials
- The Past, the Present, and the Future of Ferroelectric Memories
- (2020) T. Mikolajick et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Enhanced ferroelectricity in ultrathin films grown directly on silicon
- (2020) Suraj S. Cheema et al. NATURE
- Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction
- (2020) Da Wan et al. NANOTECHNOLOGY
- Unveiling the double-well energy landscape in a ferroelectric layer
- (2019) Michael Hoffmann et al. NATURE
- Spatially resolved steady-state negative capacitance
- (2019) Ajay K. Yadav et al. NATURE
- Ferroelectric Analog Synaptic Transistors
- (2019) Min-Kyu Kim et al. NANO LETTERS
- Magnetic 2D materials and heterostructures
- (2019) M. Gibertini et al. Nature Nanotechnology
- Small footprint transistor architecture for photoswitching logic and in situ memory
- (2019) Chunsen Liu et al. Nature Nanotechnology
- A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications
- (2019) Jingyu Li et al. Science Bulletin
- Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors
- (2019) Zheng-Dong Luo et al. ACS Nano
- Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure
- (2018) Mengwei Si et al. ACS Nano
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- (2018) Riccardo Frisenda et al. CHEMICAL SOCIETY REVIEWS
- A Graphene-Based Filament Transistor with Sub-10 mVdec−1 Subthreshold Swing
- (2018) He Tian et al. Advanced Electronic Materials
- Ferroelectric switching of a two-dimensional metal
- (2018) Zaiyao Fei et al. NATURE
- Steep-slope hysteresis-free negative capacitance MoS2 transistors
- (2017) Mengwei Si et al. Nature Nanotechnology
- Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
- (2016) Yan Chen et al. ACS Applied Materials & Interfaces
- Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
- (2016) Cheng-I Lin et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Thickness-dependent charge transport in few-layer MoS2field-effect transistors
- (2016) Ming-Wei Lin et al. NANOTECHNOLOGY
- The chips are down for Moore’s law
- (2016) M. Mitchell Waldrop NATURE
- 2D materials and van der Waals heterostructures
- (2016) K. S. Novoselov et al. SCIENCE
- Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes
- (2016) Fucai Liu et al. Nature Communications
- Van der Waals heterostructures and devices
- (2016) Yuan Liu et al. Nature Reviews Materials
- Two-dimensional semiconductors for transistors
- (2016) Manish Chhowalla et al. Nature Reviews Materials
- CuInP2S6 Room Temperature Layered Ferroelectric
- (2015) A. Belianinov et al. NANO LETTERS
- Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation
- (2015) Jingli Wang et al. Small
- Negative capacitance in a ferroelectric capacitor
- (2014) Asif Islam Khan et al. NATURE MATERIALS
- Spin Transport in Nondegenerate Si with a Spin MOSFET Structure at Room Temperature
- (2014) Tomoyuki Sasaki et al. Physical Review Applied
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- A roadmap for graphene
- (2012) K. S. Novoselov et al. NATURE
- Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering
- (2011) Li Ding et al. ACS Nano
- Graphene transistors
- (2010) Frank Schwierz Nature Nanotechnology
- Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
- (2007) Sayeef Salahuddin et al. NANO LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now