Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering

Published 2011 View Full Article

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Title
Self-Aligned U-Gate Carbon Nanotube Field-Effect Transistor with Extremely Small Parasitic Capacitance and Drain-Induced Barrier Lowering
Authors
Keywords
-
Journal
ACS Nano
Volume 5, Issue 4, Pages 2512-2519
Publisher
American Chemical Society (ACS)
Online
2011-03-03
DOI
10.1021/nn102091h

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