Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

AlGaN/GaN 2-D Electron Gas for Highly Sensitive and High-Temperature Current Sensing

(2021) Hong Quan Nguyen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sensitivity of 2DEG-based Hall-effect sensors at high temperatures

(2020) H. S. Alpert et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Piezoelectric Pressure Sensor Based on Flexible Gallium Nitride Thin Film for Harsh-Environment and High-Temperature Applications

(2020) Nam-In Kim et al.   SENSORS AND ACTUATORS A-PHYSICAL

Strain-induced effects on the electronic properties of 2D materials

(2020) Sara Postorino et al.   Nanomaterials and Nanotechnology

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

(2019) Baikui Li et al.   Applied Physics Express

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

(2019) Roccaforte et al.   Materials

Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain

(2019) Hong-Quan Nguyen et al.   MATERIALS LETTERS

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

(2018) Durga Gajula et al.   Micromachines

AlGaN/GaN pressure sensor with a Wheatstone bridge structure

(2018) X. Tan et al.   AIP Advances

InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

(2017) Caitlin A. Chapin et al.   SENSORS AND ACTUATORS A-PHYSICAL

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

(2016) Xingfu Wang et al.   ADVANCED MATERIALS

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

(2016) Ananth Saran Yalamarthy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

(2013) E.D. Le Boulbar et al.   SENSORS AND ACTUATORS A-PHYSICAL

Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device

(2012) T. Lalinský et al.   MICROELECTRONIC ENGINEERING

Determination of mass density, dielectric, elastic, and piezoelectric constants of bulk GaN crystal

(2011) W. Soluch et al.   IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility

(2010) Min Chu et al.   JOURNAL OF APPLIED PHYSICS

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

(2009) Min Chu et al.   Annual Review of Materials Research