Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

Published 2013 View Full Article

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Title
Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor
Authors
Keywords
-
Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 194, Issue -, Pages 247-251
Publisher
Elsevier BV
Online
2013-02-20
DOI
10.1016/j.sna.2013.02.017

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