Journal
MICROMACHINES
Volume 9, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/mi9050207
Keywords
MEMS; high temperature pressure sensors; AlGaN; GaN circular HFETs; GaN diaphragm
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Funding
- National Science Foundation [IIP-1512342, CBET-1606882, IIP-1602006]
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A highly sensitive Gallium Nitride (GaN) diaphragm based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer has been designed and fabricated for high temperature applications. The performance of the pressure sensor was studied over a pressure range of 20 kPa, which resulted in an ultra-high sensitivity of similar to 0.76%/kPa, with a signal-to-noise ratio as high as 16 dB, when biased optimally in the subthreshold region. A high gauge factor of 260 was determined from strain distribution in the sensor membrane obtained from finite element simulations. A repeatable sensor performance was observed over multiple pressure cycles up to a temperature of 200 degrees C.
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