Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries
Authors
Keywords
Single crystal SiC, Oxidant, Chemical mechanical polishing, Friction and wear, Removal model
Journal
WEAR
Volume 472-473, Issue -, Pages 203649
Publisher
Elsevier BV
Online
2021-02-17
DOI
10.1016/j.wear.2021.203649
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction
- (2018) Jiabin Lu et al. PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
- Chemical Mechanical Polishing of Molybdenum in Potassium Iodate-Based Acidic Slurries
- (2018) Peng He et al. ECS Journal of Solid State Science and Technology
- Material removal process of single-crystal SiC in chemical-magnetorheological compound finishing
- (2017) Huazhuo Liang et al. INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
- Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates
- (2015) Guomei Chen et al. APPLIED SURFACE SCIENCE
- Material science and device physics in SiC technology for high-voltage power devices
- (2015) Tsunenobu Kimoto JAPANESE JOURNAL OF APPLIED PHYSICS
- Chemical effects on the tribological behavior during copper chemical mechanical planarization
- (2015) Jing Li et al. MATERIALS CHEMISTRY AND PHYSICS
- First-principles investigations for oxidation reaction processes at 4H-SiC/SiO 2 interface and its orientation dependence
- (2015) Toru Akiyama et al. SURFACE SCIENCE
- Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries
- (2014) Uma Rames Krishna Lagudu et al. COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
- Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry
- (2014) Yan Zhou et al. SURFACE & COATINGS TECHNOLOGY
- Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization
- (2013) Xiaolei Shi et al. APPLIED SURFACE SCIENCE
- Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface
- (2013) Guoshun Pan et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Effect of Silicon Dioxide Hardness on Scratches in Interlevel Dielectric Chemical–Mechanical Polishing
- (2013) Tae-Young Kwon et al. TRIBOLOGY TRANSACTIONS
- Chemical mechanical polishing: Theory and experiment
- (2013) Dewen Zhao et al. Friction
- Abrasive rolling effects on material removal and surface finish in chemical mechanical polishing analyzed by molecular dynamics simulation
- (2011) Lina Si et al. JOURNAL OF APPLIED PHYSICS
- Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution
- (2011) Akihisa Kubota et al. PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now