Journal
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
Volume 36, Issue 1, Pages 137-140Publisher
ELSEVIER SCIENCE INC
DOI: 10.1016/j.precisioneng.2011.09.003
Keywords
Silicon carbide (SiC); Polishing; Planarization; Atomically flat; Damage-free
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Funding
- Ministry of Education, Culture, Sports, Science and Technology [20760087]
- Osawa Scientific Studies Grants Foundation
- Nippon Sheet Glass (NSG) Foundation for Materials Science and Engineering
- Grants-in-Aid for Scientific Research [20760087] Funding Source: KAKEN
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We have proposed a surface planarization method for silicon carbide (SiC) substrates using Fe abrasive particles and hydrogen peroxide (H(2)O(2)) solution. In this proposed method, the SiC surface is first oxidized by hydroxyl radicals generated by the decomposition of H(2)O(2) on the surface of Fe abrasive particles, and then an oxide layer is formed on the SiC substrate. This layer is then mechanically and/or chemically removed by Fe abrasive particles and H(2)O(2) solution, resulting in a smooth and damage-free SiC surface. In this study, the chemical mechanical planarization of a 4H-SiC (000 (1) over bar) C-face substrate by our proposed method was examined. The morphology was observed by phase-shift interferometric microscopy, Nomarski differential interference contrast microscopy and atomic force microscopy. The subsurface damage on the processed surface was evaluated by high-resolution transmission electron microscopy. These observations showed that the surface roughness of the SiC substrate was markedly improved and that a damage-free and scratch-free SiC surface was obtained. These results provide useful information for preparing high-integrity SiC substrates with high efficiency. (C) 2011 Elsevier Inc. All rights reserved.
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