The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction

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Title
The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction
Authors
Keywords
-
Journal
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
Volume 52, Issue -, Pages 221-226
Publisher
Elsevier BV
Online
2017-12-24
DOI
10.1016/j.precisioneng.2017.12.011

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