Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries
出版年份 2021 全文链接
标题
Tribological behavior of 6H–SiC wafers in different chemical mechanical polishing slurries
作者
关键词
Single crystal SiC, Oxidant, Chemical mechanical polishing, Friction and wear, Removal model
出版物
WEAR
Volume 472-473, Issue -, Pages 203649
出版商
Elsevier BV
发表日期
2021-02-17
DOI
10.1016/j.wear.2021.203649
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction
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