GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates

Published 2017 View Full Article

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Title
GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates
Authors
Keywords
GaN, Ultraviolet photodetectors, Quantum efficiency, Noise characteristics
Journal
SOLID-STATE ELECTRONICS
Volume 133, Issue -, Pages 78-82
Publisher
Elsevier BV
Online
2017-05-03
DOI
10.1016/j.sse.2017.04.008

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