Article
Engineering, Electrical & Electronic
Arun Malla Chowdhury, Deependra Kumar Singh, Basanta Roul, K. K. Nanda, S. B. Krupanidhi
Summary: This study demonstrates a self-powered, broad band, and ultrafast photodetector based on nanorods/epilayer heterojunction, showing outstanding photodetection performance in UV, visible, and IR ranges. The maximum responsivity observed, along with response and recovery times, provides important insights for further research on the properties of such heterojunction devices.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Physics, Applied
Kazimieras Badokas, Arunas Kadys, Juras Mickevicius, Ilja Ignatjev, Martynas Skapas, Sandra Stanionyte, Edvinas Radiunas, Giedrius Juska, Tadas Malinauskas
Summary: This study presents the growth of a GaN epilayer using remote epitaxy via graphene on a GaN/sapphire template and discusses the advantages of using monolayer graphene. The research focuses on analyzing GaN seed formation on the graphene interface and optimizing growth parameters to enhance the crystalline quality of the epilayer.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Zexuan Zhang, Yongjin Cho, Mingli Gong, Shao-Ting Ho, Jashan Singhal, Jimy Encomendero, Xiang Li, Hyunjea Lee, Huili Grace Xing, Debdeep Jena
Summary: Using plasma-assisted molecular beam epitaxy (MBE), significantly improved ferrimagnetic Mn4N layers are successfully grown on GaN, with unique epitaxial registry and comparable magnetotransport properties.
IEEE TRANSACTIONS ON MAGNETICS
(2022)
Article
Materials Science, Multidisciplinary
Qihua Zhang, Xue Yin, Songrui Zhao
Summary: The AlGaN alloy system has potential for the development of semiconductor DUV lasers due to its unique properties, but faces challenges including dislocations, defects, and difficulty in obtaining p-type high-Al-content AlGaN layers. Recent advancements in AlGaN alloys grown by MBE have shown highly conductive p-type high-Al-content AlGaN epilayers and DUV lasers with nanowire structures.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Physics, Applied
Vineeta R. Muthuraj, Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars, Stacia Keller
Summary: The growth temperature of III-nitride films was lowered through MOCVD, allowing for heterogeneous integration with other semiconductor systems. By optimizing the flow conditions of disilane, high electron concentrations and low sheet resistances were achieved, expanding device design and process options for III-nitride-based electronic devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Kazimieras Badokas, Arunas Kadys, Dominykas Augulis, Juras Mickevicius, Ilja Ignatjev, Martynas Skapas, Benjaminas Sebeka, Giedrius Juska, Tadas Malinauskas
Summary: The remote epitaxy of GaN epilayers on GaN/sapphire templates using different types of graphene interlayers was studied. The quality and structure of the graphene interlayers and GaN epilayers were analyzed using various techniques. The successful exfoliation of GaN membrane was demonstrated.
Article
Chemistry, Multidisciplinary
Baodan Liu, Qingyun Liu, Wenjin Yang, Jing Li, Xinglai Zhang, Shavkat Yuldashev, Jinlei Yao
Summary: This study synthesized nonpolar GaN nanowires through a chemical vapor deposition method and found that they exhibited strong UV luminescence, unlike the polar GaN nanowires. The unique luminescence property of nonpolar GaN nanowires provides advantages and opportunities for the development of high-performance optoelectronic nanodevices.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Chemistry, Physical
Dario Schiavon, Elzbieta Litwin-Staszewska, Rafal Jakiela, Szymon Grzanka, Piotr Perlin
Summary: The research showed that Germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio in Ge-doped GaN layers. V-pit formation can be blocked at high temperature or low V/III ratio, but the latter may cause step bunching.
Article
Materials Science, Multidisciplinary
P. V. Seredin, N. S. Buylov, D. L. Goloshchapov, S. A. Ivkov, E. P. Matyukhina, I. N. Arsentyev, A. V. Nashchekin, Sh. Sh. Sharofidinov, A. M. Mizerov, E. V. Pirogov, M. S. Sobolev
Summary: In this study, we investigated the effects of a non-polar m-plane sapphire substrate on the properties of HVPE growth and the characteristics of the GaN epitaxial film. We successfully obtained high-quality semipolar GaN samples on the m-sapphire substrate and determined their structural and optical properties. The optimization of the technological methodology may present a promising approach for the growth of high-quality GaN structures on large area m-sapphire substrates.
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Vasudeva Reddy Minnam Reddy, V. R. Singh, K. Rahim Bakash, Suresh Kumar, Debabratha Saha, Vellaichamy Mahendran, Venkata Krishnaiah Kummara, Gopi Krishna Guntupalli, S. V. Prabhakar Vattikuti
Summary: To realize a sustainable future, further developments in energy consumption are crucial for the operation of electronic devices. This study focuses on the use of rare earth oxides as gate dielectrics in photodetectors, specifically by depositing Nd2O3 thin films on the Au/GaN interface to achieve wavelength selectivity in the UV to VIS region.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Chemistry, Multidisciplinary
Yimeng Song, Yingfeng He, Yangfeng Li, Huiyun Wei, Peng Qiu, Qianming Huang, Zhiquan He, Junhui Die, Mingzeng Peng, Xinhe Zheng
Summary: In this study, GaN thin films were grown directly on monolayer MoS2 for the first time using plasma-enhanced atomic layer deposition. Various characterization methods revealed the crystalline structure of GaN and the interface properties with mono-MoS2. The growth of GaN on MoS2 was found to follow the Stranski-Krastanov mode, with different growth phases observed depending on the ALD cycles.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Engineering, Environmental
Yikai Liao, You Jin Kim, Munho Kim
Summary: In this research, a high sensitivity self-powered UV photodetector with low dark current and low power consumption was developed by constructing a heterojunction on a commercially available substrate. The detector exhibited excellent performance with a dark current as low as 0.45 pA, a detectivity of 1.9 x 1013 Jones, and fast response times. This work provides a cost-effective approach for the development of highly sensitive UV detecting devices.
CHEMICAL ENGINEERING JOURNAL
(2023)
Article
Chemistry, Physical
Muhammad Iznul Hisyam, Rizuan Norhaniza, Ahmad Shuhaimi, Marwan Mansor, Adam Williams, Mohd Rofei Mat Hussin
Summary: To improve the quality of GaN-on-Si and enhance the performance of optoelectronic devices, a pulse atomic-layer epitaxy (PALE) AlN buffer layer is introduced. The study investigates the effect of different cycle numbers of AlN PALE buffer layer on the quality of GaN grown on Si(111) substrate. Various characterization techniques reveal that the AlN PALE layer reduces surface cracks, improves structural properties, and decreases tensile strain in the GaN epilayers.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Iwan Susanto, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, Ing-Song Yu
Summary: Van der Waals epitaxial GaN thin films were successfully grown on c-sapphire substrates with a sp(2)-bonded two-dimensional MoS2 buffer layer. Higher substrate temperatures during molecular beam epitaxy (MBE) growth led to improved crystallinity and optical properties of the GaN films, as well as smoother surface morphology and stable chemical composition. Exfoliation of the GaN/MoS2 heterostructure was also examined, revealing the largest granular structures with good crystallinity in films grown at 700 degrees C.
Article
Materials Science, Coatings & Films
Iwan Susanto, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, Ing-Song Yu
Summary: This study investigates the growth of GaN films on layered 2D-MoS2/c-sapphire substrate using a plasma-assisted molecular beam epitaxy system. The pre-nitridation process and growth duration are found to enhance the optical properties and crystal quality of the GaN films. The study also demonstrates a potential solution for the future applications of GaN-based devices.
SURFACE & COATINGS TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Rohit Kumar Pant, Basanta Roul, Deependra Kumar Singh, Arun Malla Chowdhury, K. K. Nanda, S. B. Krupanidhi
Summary: Self-aligned GaN nanorods of various densities are grown on an r-plane Al2O3 substrate using a plasma-assisted molecular beam epitaxy system. The nanorods have an inclination of 60 degrees from the substrate, while the GaN thin film grows along the [11-20] direction and nanorods preferentially grow along the [0002] axis, mimicking the Gaussian distribution of Schottky barriers. Increasing the GaN nanorod density results in a systematic reduction of the Schottky barrier, providing a tunable Gaussian distribution of Schottky barriers suitable for replacing conventional multi-level electrode stacking techniques.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Physics, Applied
B. Buonacorsi, F. Sfigakis, A. Shetty, M. C. Tam, H. S. Kim, S. R. Harrigan, F. Hohls, M. E. Reimer, Z. R. Wasilewski, J. Baugh
Summary: Quantized charge pumping has been realized using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases. The devices operate at up to 0.95 GHz and show remarkable performance under relaxed experimental conditions, making them suitable for optoelectronics applications. Further improvement could lead to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Deependra Kumar Singh, Rohit Kumar Pant, K. K. Nanda, S. B. Krupanidhi
Summary: A new type of broadband photodetector based on MoS2/GaN/Si heterojunction is reported, which exhibits wavelength selectivity through photocurrent polarity inversion and high spectral response in a broad range of wavelengths. The device shows potential for futuristic photonic applications without the need for filters.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Basanta Roul, Deependra Kumar Singh, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda, S. B. Krupanidhi
Summary: This study presents a detailed report on the modulation of electrical properties of VO2/Si heterostructures by applying an external electrical field across VO2 thin films. The results show a reversible semiconductor-to-metal transition and hysteresis loop in the resistance of the device around the transition temperature of the VO2 thin film. Additionally, significant changes in junction current were observed when an external bias was applied on the VO2 thin film, demonstrating the potential for external control of electrical transport in vertical heterostructures.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Pius Augustine, Kishan Lal Kumawat, Deependra Kumar Singh, Saluru Baba Krupanidhi, Karuna Kar Nanda
Summary: A heterostructure of MoS2/SnO2 has been fabricated to achieve self-powered broadband photodetection ranging from UV-visible to near-infrared wavelength by utilizing the built-in electric potential at SnO2/MoS2 interface. The device exhibits excellent photoresponse with high responsivity and detectivity under near-infrared illumination, as well as fast response time. The excellent performance is attributed to the high electron transport behavior of SnO2 and the built-in electric field at the interface.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Deependra Kumar Singh, Pukhraj Prajapat, Jyoti Saroha, Rohit Kumar Pant, Shailesh Narain Sharma, Karuna Kar Nanda, Saluru Baba Krupanidhi, Govind Gupta
Summary: The photodetection properties of a-GaN nanorods-based photodetector and the effect of decorating silver nanoparticles are investigated. The original a-GaN detector exhibits negative photoconductivity, attributed to defect states in GaN nanorods. Introduction of nanoparticles reverses the photocurrent polarity, leading to a significant enhancement in the photoresponsivity due to the passivation of surface defect states and reduced dark current.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Lin Tian, Francois Sfigakis, Arjun Shetty, Ho-Sung Kim, Nachiket Sherlekar, Sara Hosseini, Man Chun Tam, Brad van Kasteren, Brandon Buonacorsi, Zach Merino, Stephen R. Harrigan, Zbigniew Wasilewski, Jonathan Baugh, Michael E. Reimer
Summary: Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have potential applications in quantum optoelectronics and ease of integration with other components. However, unwanted charge accumulation at the p-n junction has been a major obstacle. This study introduces a gate voltage protocol that clears the parasitic charge accumulation at low temperature, enabling cryogenic operation of devices and achieving stable, bright, dopant-free lateral p-n junctions.
APPLIED PHYSICS LETTERS
(2023)
Review
Materials Science, Multidisciplinary
Kavya Ravindran, Jayjit Kumar Dey, Aryan Keshri, Basanta Roul, Saluru Baba Krupanidhi, Sujit Das
Summary: This review focuses on the topological phenomena at oxide interfaces and their applications in high-density low-energy nonvolatile memory and spintronic devices. The synthesis of high-quality ultrathin films and their characterization through experimental and theoretical methods have allowed the explanation of promising quantum phenomena and exotic phases. The review also discusses interesting interface aspects in ferroic thin films and heterostructures, and provides an overview of future research directions.
MATERIALS FOR QUANTUM TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh
Summary: The effects of illumination on undoped two-dimensional electron gases (2DEGs) of varying depths at low temperature are investigated. Unbiased illuminations result in a gain in mobility at a certain electron density for 2DEGs located farther away from the surface, while for 2DEGs closer to the surface, a loss in mobility is observed. Biased illuminations with positive gate voltages lead to a mobility gain, whereas those with negative gate voltages result in a mobility loss. The magnitude of the mobility gain/loss weakens with increasing depth of the 2DEG. These changes in mobility are reversible through another biased illumination with the appropriate gate voltage, provided both n-type and p-type Ohmic contacts are present. Experimental results are modeled using Boltzmann transport theory, and possible mechanisms are discussed.
Article
Engineering, Electrical & Electronic
Arun Malla Chowdhury, Deependra Kumar Singh, Basanta Roul, K. K. Nanda, S. B. Krupanidhi
Summary: This study demonstrates a self-powered, broad band, and ultrafast photodetector based on nanorods/epilayer heterojunction, showing outstanding photodetection performance in UV, visible, and IR ranges. The maximum responsivity observed, along with response and recovery times, provides important insights for further research on the properties of such heterojunction devices.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Kishan Lal Kumawat, Deependra Kumar Singh, Karuna Kar Nanda, Saluru Baba Krupanidhi
Summary: Metal dichalcogenide semiconductors have shown great performance in various optoelectronic applications, but low carrier mobility has restricted their use in highly responsive photodetectors. By incorporating SnSe2 with reduced graphene oxide (RGO) to form a SnSe2-RGO bulk heterojunction and depositing it on a MoS2 film, a self-powered photodetector with excellent performance was achieved.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
