Article
Physics, Multidisciplinary
Jingda Zhao, Xin Wang, Yuzhu Pan, Yubing Xu, Yuwei Li, Jing Chen, Jun Wu, Qing Li, Zhiwei Zhao, Xiaobing Zhang, Javed Akram, Byung Seong Bae, Haining Yang, Wei Lei
Summary: In this study, n(-)-n(+) photo-diodes were fabricated by growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate. The epitaxial layer effectively improved the interface between n(-)-type and n(+)-type layers, resulting in low dark current. This work provides valuable information for UV detection based on perovskites.
FRONTIERS IN PHYSICS
(2021)
Article
Physics, Applied
Ding Wang, Ping Wang, Boyu Wang, Zetian Mi
Summary: Single-phase wurtzite ScGaN grown on GaN by plasma-assisted molecular beam epitaxy exhibits distinct ferroelectric properties, with tunable coercive fields and large retainable remnant polarization. Leveraging the widely tunable energy bandgap of III-nitride semiconductors, the demonstration of ferroelectricity in ScGaN will enable a broad range of emerging applications in ferroelectric, electronic, optoelectronic, photovoltaic, and/or photonic devices and systems.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Keshab R. Sapkota, Francois Leonard, A. Alec Talin, Brendan P. Gunning, Barbara A. Kazanowska, Kevin S. Jones, George T. Wang
Summary: Top-down fabricated gallium nitride (GaN)-based nanoscale vacuum electron diodes exhibit record ultralow turn-on voltages and stable high field-emission currents, showing promise for high-performance and robust III-nitride-based vacuum nano-electronics applications.
Article
Physics, Applied
Toshihiro Nakamura, Tomoaki Nishimura, Kazuo Kuriyama, Tohru Nakamura, Atsushi Kinomura
Summary: The research investigates gamma-ray-induced photoemissions from GaN single crystal wafers at room temperature, showing different emission spectra with intensity proportional to wafer thickness, suggesting the potential use of GaN as a gamma-ray detector.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Changyong Lan, Rui Zhang, Haolun Wu, Shaofeng Wen, Ruisen Zou, Xiaolin Kang, Chun Li, Johnny C. Ho, Yi Yin, Yong Liu
Summary: The study reports the epitaxial growth of WS2 monolayer films on sapphire with excellent electrical and optoelectronic properties via an enhanced chemical vapor deposition method. The research demonstrates the high quality of the synthesized WS2 monolayers, indicating potential practical applications for 2D materials.
APPLIED MATERIALS TODAY
(2021)
Article
Nanoscience & Nanotechnology
Mengrou Wang, Yubing Xu, Xin Wang, Yuwei Li, Jingda Zhao, Yuzhu Pan, Jing Chen, Qing Li, Zhiwei Zhao, Jun Wu, Wei Lei
Summary: This study proposes a novel broadband heterojunction structure by fabricating a MAPbI(3) layer on the surface of Cs2AgBiBr6 single crystal substrate, achieving an expanded device response range and reduced dark current density.
Article
Chemistry, Multidisciplinary
Yuxia Feng, Xuelin Yang, Zhihong Zhang, Jie Zhang, Jiaqi Wei, Lixing Zhou, Kaihui Liu, Fujun Xu, Weikun Ge, Bo Shen
Summary: The AlN nucleation layer plays a significant role in the epitaxial growth of single-crystalline GaN on single-crystalline graphene, providing orientation driving force and increasing nucleation density. The insights gained from this research can be applied to epitaxy of other materials on diverse two-dimensional materials.
Article
Physics, Applied
Simran, Santosh Kumar Yadav, Poulab Chakrabarti, Subhabrata Dhar
Summary: This study systematically investigates the growth, structural, electrical, and luminescence properties of zinc oxide (ZnO) layers. It is found that high-quality c-ZnO films can be grown under certain growth conditions. The films have low dislocation densities and high mobility. Photoluminescence studies reveal various luminescence features in the films, which can be minimized by adjusting the growth conditions.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto, Len van Deurzen, Wesley Turner, Patrick Fay, Sai Mu, Chris G. van de Walle, Amit Lal, Huili (Grace) Xing, Debdeep Jena
Summary: Epitaxial ScxAl1-xN thin films grown on metal polar GaN substrates exhibit high relative dielectric permittivity, the largest among existing nitride materials. The films also have polarization discontinuity, which can be utilized for extending transistor operation in power electronics and high-speed microwave applications.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Khushboo Kumari, Sandeep Vura, Srinivasan Raghavan, Sushobhan Avasthi
Summary: The pulsed Nd:YAG laser was used to crystallize amorphous germanium thin-films, resulting in epitaxial Ge, with film thickness and laser fluence playing a crucial role. The epitaxial Ge preparation method is fast, cost-effective, and has a low thermal budget, making it suitable for large area applications.
Article
Materials Science, Multidisciplinary
Jishi Cui, Jianping Zhou, Hongmin Chen, Hongdi Xiao
Summary: By fabricating in UV-light, the nanoporous GaN distributable Bragg reflector exhibits higher reflectivity and quality.
Article
Physics, Applied
Michael E. Liao, William L. Olsen, Kenny Huynh, Dorian P. Luccioni, Yekan Wang, XianRong Huang, Michael J. Wojcik, Andrew A. Allerman, Mark S. Goorsky
Summary: Localized lattice distortions in GaN substrates can nucleate epitaxial macro-steps and macro-terraces, leading to optically hazy surfaces. The defects and dislocations in the substrate induce lattice distortions and result in the formation of macro-features such as macro-terraces with lengths ranging from 30 to 150 µm and macro-step heights ranging from 200 to 400 nm. Threading screw dislocations or GaN nanopipes can also cause localized distortion and hillock formation, eventually evolving into macro-terraces and macro-steps. This study highlights the importance of localized lattice tilt from defects in controlling macro-feature formation.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Thom R. Harris-Lee, Yan Zhang, Christopher R. Bowen, Philip J. Fletcher, Yuanzhu Zhao, Zhenyu Guo, Jerome W. F. Innocent, S. Andrew L. Johnson, Frank Marken
Summary: Photo-generated high-energy surface states can assist in the production of chlorine in aqueous environments. Aligned rutile nanocrystal arrays grown on fluorine-doped tin oxide substrates and activated by hydrothermal Sr/Ba surface doping and/or vacuum-annealing exhibit highly photoactive properties, leading to efficient photoelectrochemical chlorine production. Vacuum-annealing is suggested to enhance semiconductor TiO2 nanocrystal properties, surface reactivity, and substrate performance.
Article
Chemistry, Multidisciplinary
Yanhao Dong, Hongbing Yang, Lin Zhang, Xingyu Li, Dong Ding, Xiaohui Wang, Ju Li, Jiangong Li, I-Wei Chen
Summary: A two-step sintering route has been successfully used to achieve uniform grain-size distribution in nanocrystalline materials, surpassing theoretical predictions. This breakthrough provides valuable insights for advancements in materials science.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Physics, Applied
M. Monish, S. S. Major
Summary: This study investigated the properties of epitaxial GaN films grown at different nitrogen partial pressures, revealing parameters such as lattice strain and dislocation density through various testing methods. The research found that the strain and stress of the films mainly depend on the nitrogen partial pressure and the ratio of nitrogen to argon content.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Crystallography
C. Ramesh, P. Tyagi, G. Abhiram, G. Gupta, M. Senthil Kumar, S. S. Kushvaha
JOURNAL OF CRYSTAL GROWTH
(2019)
Article
Chemistry, Multidisciplinary
Prashant Tyagi, Ch. Ramesh, S. S. Kushvaha, Govind Gupta, M. Senthil Kumar
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
(2020)
Article
Chemistry, Multidisciplinary
C. Ramesh, P. Tyagi, S. Bera, S. Gautam, Kiran M. Subhedar, M. Senthil Kumar, Sunil S. Kushvaha
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
(2020)
Article
Chemistry, Multidisciplinary
Ch. Ramesh, J. Pandey, P. Tyagi, A. Soni, M. Senthil Kumar, S. S. Kushvaha
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
(2020)
Article
Chemistry, Multidisciplinary
Ch. Ramesh, P. Tyagi, M. Senthil Kumar, Sunil S. Kushvaha
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
(2020)
Article
Engineering, Electrical & Electronic
Ch Ramesh, P. Tyagi, S. Gautam, S. Ojha, G. Gupta, M. Senthil Kumar, S. S. Kushvaha
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2020)
Article
Physics, Condensed Matter
Ch Ramesh, P. Tyagi, S. Gautam, S. Ojha, M. Senthil Kumar, S. S. Kushvaha
PHYSICA B-CONDENSED MATTER
(2020)
Article
Engineering, Electrical & Electronic
V. Aggarwal, C. Ramesh, P. Tyagi, S. Gautam, A. Sharma, Sudhir Husale, M. Senthil Kumar, S. S. Kushvaha
Summary: Epitaxial GaN nanostructures were successfully grown on sapphire (11-20) substrates by adjusting buffer layer conditions, showing potential for application in UV-photodetectors. The shape and size of GaN nanostructures were found to significantly impact the responsivity of the UV-photodetector devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Physics, Multidisciplinary
Amit Kumar Mauraya, Debashrita Mahana, Prashant Tyagi, Ch Ramesh, Ajay Kumar Shukla, Sudhir Husale, Sunil Singh Kushvaha, Muthusamy Senthil Kumar
Summary: The influence of using different types of GaN targets on the surface morphology and structural quality of GaN epilayers was studied, with confirmation through X-ray rocking curve measurements and X-ray photoelectron spectroscopy. Further investigation was conducted on the effect of threading dislocation density on the ultraviolet photoresponse properties of GaN layers using metal-semiconductor-metal structures.
Article
Materials Science, Multidisciplinary
Ch Ramesh, P. Tyagi, S. Gautam, A. K. Mauraya, S. Ojha, G. Gupta, M. Senthil Kumar, S. S. Kushvaha
Article
Chemistry, Multidisciplinary
Ch. Ramesh, P. Tyagi, J. Kaswan, B. S. Yadav, A. K. Shukla, M. Senthil Kumar, S. S. Kushvaha
Article
Chemistry, Multidisciplinary
Prashant Tyagi, Ch. Ramesh, B. S. Yadav, S. S. Kushvaha, M. Senthil Kumar
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
