Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy

Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

(2015) Weijia Yang et al.   CRYSTENGCOMM

The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality

(2015) Lin Shang et al.   RSC Advances

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

(2015) S. S. Kushvaha et al.   RSC Advances

Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

(2015) Tae Hoon Seo et al.   Scientific Reports

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

(2014) Wenliang Wang et al.   CRYSTENGCOMM

Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN

(2014) Xiaotong Liu et al.   CRYSTENGCOMM

Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target

(2014) M. Senthil Kumar et al.   Science of Advanced Materials

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

(2014) Lei Zhang et al.   Scientific Reports

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

(2014) S. S. Kushvaha et al.   AIP Advances

Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy

(2014) Sunil Singh Kushvaha et al.   Materials Research Express

Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

(2013) Jinn-Kong Sheu et al.   APPLIED PHYSICS LETTERS

High efficient GaN-based laser diodes with tunnel junction

(2013) M. X. Feng et al.   APPLIED PHYSICS LETTERS

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

(2013) D. O. Demchenko et al.   PHYSICAL REVIEW LETTERS

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

(2013) S. S. Kushvaha et al.   AIP Advances

The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectroscopy

(2012) Hai-Ying Xing et al.   Chinese Physics B

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

(2012) Basanta Roul et al.   JOURNAL OF CRYSTAL GROWTH

Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

(2011) Dabing Li et al.   APPLIED PHYSICS LETTERS

Effect of thickness on the microstructure of GaN films on Al2O3(0001) by laser molecular beam epitaxy

(2011) Ying-Ying Liu et al.   Chinese Physics B

Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

(2011) Zhongjie Xu et al.   JOURNAL OF APPLIED PHYSICS

Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

(2011) Yuen-Yee Wong et al.   THIN SOLID FILMS

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(2010) W. Chikhaoui et al.   APPLIED PHYSICS LETTERS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS