Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4

Study of Back Bending in 157,158Er Isotopes by Using Electromagnetic Reduced Transition Probabilities

(2020) Mehran Shahriarie et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Magnetic phase diagram of CrPS4 and its exchange interaction in contact with NiFe

(2020) Shilei Ding et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

(2020) Feng-Shou Yang et al.   Nature Communications

Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

(2020) Kun Yang et al.   Nanomaterials

Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4

(2020) Mi Jung Lee et al.   NPG Asia Materials

New Floating Gate Memory with Excellent Retention Characteristics

(2019) Shuopei Wang et al.   Advanced Electronic Materials

Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

(2018) Riccardo Frisenda et al.   CHEMICAL SOCIETY REVIEWS

Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

(2018) Changhee Lee et al.   NANOTECHNOLOGY

Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

(2018) HyunJeong Kim et al.   Nanoscale

Polarization induced switching in PZT back gated multilayer MoS2 FETs for low power non-volatile memory

(2018) Lakshmi Ganapathi Kolla et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

(2017) Pengkun Xia et al.   Scientific Reports

Electronic and Optoelectronic Devices based on Two-Dimensional Materials: From Fabrication to Application

(2017) Jaewoo Shim et al.   Advanced Electronic Materials

2D transition metal dichalcogenides

(2017) Sajedeh Manzeli et al.   Nature Reviews Materials

Charge trap memory based on few-layer black phosphorus

(2016) Qi Feng et al.   Nanoscale

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors

(2014) Mikai Chen et al.   ACS Nano

Tunable Charge-Trap Memory Based on Few-Layer MoS2

(2014) Enze Zhang et al.   ACS Nano

Heterostructures based on inorganic and organic van der Waals systems

(2014) Gwan-Hyoung Lee et al.   APL Materials

Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures

(2013) Simone Bertolazzi et al.   ACS Nano

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics

(2012) Chun-Chieh Lu et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano