Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
Authors
Keywords
-
Journal
Scientific Reports
Volume 7, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-01-13
DOI
10.1038/srep40669
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Transferred large area single crystal MoS2 field effect transistors
- (2015) Choong Hee Lee et al. APPLIED PHYSICS LETTERS
- Atomistic Modeling of Sulfur Vacancy Diffusion Near Iron Pyrite Surfaces
- (2015) Y. N. Zhang et al. Journal of Physical Chemistry C
- Growth of wafer-scale MoS2 monolayer by magnetron sputtering
- (2015) Junguang Tao et al. Nanoscale
- Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT
- (2015) Changjian Zhou et al. Nanoscale
- Tuning the threshold voltage of MoS2field-effect transistors via surface treatment
- (2015) Wei Sun Leong et al. Nanoscale
- Native defects in bulk and monolayerMoS2from first principles
- (2015) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Two-dimensional (2D) transition metal dichalcogenide semiconductor field-effect transistors: the interface trap density extraction and compact model
- (2015) Faraz Najam et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Exploring atomic defects in molybdenum disulphide monolayers
- (2015) Jinhua Hong et al. Nature Communications
- Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors
- (2015) Sungju Choi et al. Journal of Semiconductor Technology and Science
- Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates
- (2015) Tao Li et al. AIP Advances
- Growth of Large-Area 2D MoS2(1-x)Se2xSemiconductor Alloys
- (2014) Qingliang Feng et al. ADVANCED MATERIALS
- High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
- (2013) Wei Wu et al. APPLIED PHYSICS LETTERS
- Single-Layer MoS2Field Effect Transistor with Epitaxially Grown SrTiO3Gate Dielectric on Nb-doped SrTiO3Substrate
- (2013) Woo-Hee Kim et al. BULLETIN OF THE KOREAN CHEMICAL SOCIETY
- Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
- (2013) Han Liu et al. NANO LETTERS
- Low-frequency noise in multilayer MoS2field-effect transistors: the effect of high-k passivation
- (2013) Junhong Na et al. Nanoscale
- Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy
- (2013) Wencan Jin et al. PHYSICAL REVIEW LETTERS
- From Bulk to Monolayer MoS2: Evolution of Raman Scattering
- (2012) Hong Li et al. ADVANCED FUNCTIONAL MATERIALS
- Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition
- (2012) Yi-Hsien Lee et al. ADVANCED MATERIALS
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
- (2012) Keng-Ku Liu et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
- (2012) Yu-Chuan Lin et al. Nanoscale
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate
- (2012) Yongjie Zhan et al. Small
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Photoluminescence from Chemically Exfoliated MoS2
- (2011) Goki Eda et al. NANO LETTERS
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
- (2010) Eun Ji Kim et al. APPLIED PHYSICS LETTERS
- Ab-initiosimulations of materials using VASP: Density-functional theory and beyond
- (2008) Jürgen Hafner JOURNAL OF COMPUTATIONAL CHEMISTRY
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search