Article
Chemistry, Physical
Shunli He, Lichun Zhang, Dan Tian, Zhiying Zhou, Anqi Guo, Bin Xia, Yadan Zhu, Fengzhou Zhao
Summary: In this study, high-quality Cs3Cu2Br5 thin films with good stability were prepared on GaN substrates by pulse laser deposition (PLD) for the first time. The morphology, crystal structure, and photoelectric properties of the Cs3Cu2Br5 thin films were systematically studied. A self-powered UV photodetector based on Cs3Cu2Br5/n-GaN heterojunction was fabricated, exhibiting two dominant responses in the UV region.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Zikrulloh Khuzhakulov, Salizhan Kylychbekov, Yaran Allamyradov, Inomjon Majidov, Mikhail Khenner, Jasminka Terzic, Danielle Gurgew, Ali Oguz Er
Summary: This study investigated the deposition of Zirconium (Zr) thin films on silicon substrates using pulsed laser deposition (PLD). The experiments were performed with two different laser wavelengths (1064 nm and 532 nm), varying substrate temperatures (25 degrees C, 300 degrees C, and 500 degrees C), and laser fluences (0.25, 0.5, 1.0 J/cm2). Results showed that smoother films were obtained with the 1064 nm laser wavelength, and surface roughness increased with higher laser fluences. The optimal crystalline films were obtained at a substrate temperature of 300 degrees C. XRD, SEM, and AFM analysis provided patterns and peaks related to the laser parameters. Computational simulations based on a continuum model of thin film growth agreed with experimental observations. This study emphasizes the crucial factors affecting Zr thin film deposition and provides insights for optimizing PLD parameters to achieve high-quality films.
Article
Materials Science, Multidisciplinary
Salizhan Kylychbekov, Yaran Allamyradov, Zikrulloh Khuzhakulov, Inomjon Majidov, Simran Banga, Justice ben Yosef, Liviu Duta, Ali Oguz Er
Summary: This study investigated the effects of substrate temperature and ablation wavelength/mechanism on the properties of hydroxyapatite (HA) coatings. The results indicated that increasing temperature led to increased crystallinity of the coatings. However, temperatures above 700℃ negatively affected protein adsorption and adhesion properties of the coatings.
Article
Physics, Condensed Matter
Kehong Zhou, Yi Huang, Qi Wang, Wen Yang, Hongsheng Zhang, Bin Liu
Summary: This study explores the luminescence characteristics of hexagonal GaN (h-GaN) and cubic GaN (c-GaN) grown on micropatterned Si(100) substrates. The research reveals that cubic InGaN/GaN multiple quantum wells (c-MQWs) have higher indium content and produce longer wavelength emissions compared to hexagonal InGaN/GaN MQWs (h-MQWs), suggesting great potential for red light emitting diode applications.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Meixin Feng, Hanru Zhao, Rui Zhou, Yongjun Tang, Jianxun Liu, Xiujian Sun, Qian Sun, Hui Yang
Summary: GaN-based microdisk laser monolithically integrated on Si(100) with lower junction temperature and narrow spectral line width was successfully fabricated using wafer bonding and substrate removal.
Article
Chemistry, Physical
Xiangnan Gong, Menglei Feng, Hong Wu, Hongpeng Zhou, Chunhung Suen, Hanjun Zou, Lijie Guo, Kai Zhou, Shijian Chen, Jiyan Dai, Guoyu Wang, Xiaoyuan Zhou
Summary: This work focuses on improving the quality of highly (100)-oriented SnSe thin films for thermoelectric applications. By controlling key parameters during pulsed-laser deposition and performing vacuum thermal annealing, the film quality was enhanced. The best crystal quality and uniform orientation were achieved on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min, showcasing promising Seebeck coefficient and power factor values.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
Cheng Wang, Fengzhou Zhao, Zhiying Zhou, Xiaoxuan Li, Shunli He, Menglong Zhang, Dengying Zhang, Lichun Zhang
Summary: All-inorganic perovskite CsCu2I3 thin films were prepared on Si(100) substrates using pulsed laser deposition technology. The morphology, structure, and optical properties of CsCu2I3 films were investigated, and a CsCu2I3/Si n-n heterojunction UV photodetection device was constructed. The device demonstrated excellent self-powered photoresponse performance and good spectral selectivity in the UV range.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Fawad Tariq, Ameer Abdullah, Mandar A. Kulkarni, Hamza Thaalbi, Indrajit Bagal, Soon Hyung Kang, Jun-Seok Ha, Sang-Wan Ryu
Summary: Nanostructured GaN semiconductors have the potential to enhance the efficiency of photoelectrochemical cells, but their stability and solar-to-hydrogen conversion efficiency need improvement. This study explores the use of passivation layers, cocatalysts, and textured platforms to address these issues. The results show that GaN nanowires on silicon substrate exhibit higher photocurrent density and conversion efficiency compared to other substrates.
MATERIALS TODAY PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Jayant Kolte, Prakash Gopalan
Summary: In this work, heteroepitaxial Bi0.90La0.10Fe0.95Mn0.05O3 (BLFMO) thin films have been grown on Si (100) substrate using LaNiO3/CeO2/Y0.08Zr0.92O3 buffer layers and on SrTiO3 (STO) substrate using pulsed laser deposition. The electrical properties of the films deposited on different substrates have been studied, revealing distinct conductivity behavior and mechanisms.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Marianna Spankova, Stefan Chromik, Edmund Dobrocka, Lenka Pribusova Slusna, Marcel Talacko, Maros Gregor, Bela Pecz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo
Summary: In this paper, few-layer MoS2 films were prepared on single-crystal sapphire and heteroepitaxial GaN templates on sapphire substrates using pulsed laser deposition (PLD) technique. The films exhibited epitaxial growth and uniform thickness. The electrical current transport and current injection behavior of the films were studied and showed high n-type doping and rectifying behavior.
Article
Chemistry, Analytical
Husam Aldin A. Abdul Amir, Makram A. Fakhri, Ali A. Alwahib, Evan T. Salim, Forat H. Alsultany, U. Hashim
Summary: Pulsed-laser ablation in liquid was used to prepare GaN nanostructure for the fabrication of a NO2 gas sensor. The study found that using a 532 nm laser wavelength enhanced GaN formation, increased grain growth, and improved optical properties. The GaN sample prepared at 532 nm also exhibited better sensor performance at 250 degrees C.
SENSORS AND ACTUATORS B-CHEMICAL
(2022)
Article
Chemistry, Multidisciplinary
Yoshinobu Kawaguchi, Kentaro Murakawa, Motohisa Usagawa, Yuuta Aoki, Kazuma Takeuchi, Takeshi Kamikawa
Summary: We propose a novel laser diode fabrication process to produce GaN-based edge emitting LDs with a cavity length of 100 mu m and cleaved facets. The process involves growing epitaxial LD layers on a Si substrate using the epitaxial lateral overgrowth (ELO) technique. The unique configuration of the ELO layers generates anisotropic tensile strain, enabling automatic cleavage of the laser facets without a breaking process. This fabrication process has the potential to create low energy consumption III-nitride LDs for mobile applications like augmented-reality glasses.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Physics, Applied
Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao
Summary: This study demonstrates the reduction of carbon impurities in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) using laser-assisted MOCVD (LA-MOCVD) technique. The incorporation of carbon is effectively suppressed in LA-MOCVD under different growth rate regimes. A theoretical model explains the mechanism of carbon incorporation and suggests that higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles can further reduce carbon impurity levels.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Arunas Kadys, Juras Mickevicius, Kazimieras Badokas, Simonas Strumskis, Egidijus Vanagas, Zydrunas Podlipskas, Ilja Ignatjev, Tadas Malinauskas
Summary: The epitaxial lateral overgrowth (ELO) of GaN epilayers on a sapphire substrate was investigated using a laser-patterned graphene interlayer. Monolayer graphene was transferred onto the substrate and its quality was confirmed. Different patterns were produced to facilitate GaN nucleation, and the impact on crystal quality was analyzed. The results showed that laser-ablated graphene can improve the structural quality of GaN epilayers.
Article
Materials Science, Multidisciplinary
Raid A. Ismail, Abdulqader D. Faisal, Suaad S. Shaker
Summary: In this study, a zinc sulfide (ZnS) nanostructure film was successfully deposited on multi-walled carbon nanotubes (MWCNTs) using pulsed laser deposition technique. The ZnS/MWCNTs nanocomposite prepared at 5.3 J/cm² exhibited the best crystallinity. Scanning electron microscope (SEM) analysis revealed that the deposited ZnS films had a smooth structure with spherical particles attached to the surface. The current-voltage characteristics of the ZnS-decorated MWCNTs/Si heterojunction photodetectors showed high responsivity values, indicating the potential of these devices for optical sensing applications.
Article
Chemistry, Multidisciplinary
Sheng-Hann Wang, Chia-Wei Lee, Kun-Ching Shen, Fan-Gang Tseng, Pei-Kuen Wei
Article
Chemistry, Multidisciplinary
Kun-Ching Shen, Chen-Ta Ku, Chiieh Hsieh, Hao-Chung Kuo, Yuh-Jen Cheng, Din Ping Tsai
ADVANCED MATERIALS
(2018)
Article
Multidisciplinary Sciences
Hung- Lin, Kun-Ching Shen, Shih-Yao Lin, Golam Haider, Yao-Hsuan Li, Shu-Wei Chang, Yang-Fang Chen
SCIENTIFIC REPORTS
(2018)
Article
Chemistry, Physical
Kun-Ching Shen, Chiieh Hsieh, Yuh-Jen Cheng, Din Ping Tsai
Article
Engineering, Electrical & Electronic
Ray-Hua Horng, Kun-Ching Shen, Ching-Ho Tien, Sin-Cyuan Lin, Dong-Sing Wuu
IEEE ELECTRON DEVICE LETTERS
(2014)
Article
Engineering, Electrical & Electronic
Zhen-Yu Li, Chia-Yu Lee, Da-Wei Lin, Bing-Cheng Lin, Kun-Ching Shen, Ching-Hsueh Chiu, Po-Min Tu, Hao-Chung Kuo, Wu-Yih Uen, Ray-Hua Horng, Gou-Chung Chi, Chun-Yen Chang
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2014)
Article
Engineering, Electrical & Electronic
Hung-I Lin, Ray-Hua Horng, Kun-Ching Shen, Dong-Sing Wuu
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2014)
Article
Multidisciplinary Sciences
Shu-Wei Chang, Wei-Cheng Liao, Yu-Ming Liao, Hung-I Lin, Hsia-Yu Lin, Wei-Ju Lin, Shih-Yao Lin, Packiyaraj Perumal, Golam Haider, Chia-Tse Tai, Kun-Ching Shen, Cheng-Han Chang, Yuan-Fu Huang, Tai-Yuan Lin, Yang-Fang Chen
SCIENTIFIC REPORTS
(2018)
Article
Nanoscience & Nanotechnology
Hung-I Lin, Kanchan Yadav, Kun-Ching Shen, Golam Haider, Pradip Kumar Roy, Monika Kataria, Ting-Jia Chang, Yao-Hsuan Li, Tai-Yuan Lin, Yit-Tsong Chen, Yang-Fang Chen
ACS APPLIED MATERIALS & INTERFACES
(2019)
Article
Chemistry, Multidisciplinary
Golam Haider, Hung-I Lin, Kanchan Yadav, Kun-Ching Shen, Yu-Ming Liao, Han-Wen Hu, Pradip Kumar Roy, Krishna Prasad Bera, Kung-Hsuan Lin, Hsien-Ming Lee, Yit-Tsong Chen, Fu-Rong Chen, Yang-Fang Chen
Article
Physics, Applied
Kun-Ching Shen, Yi-Teng Huang, Tsung Lin Chung, Ming Lun Tseng, Wei-Yi Tsai, Greg Sun, Din Ping Tsai
PHYSICAL REVIEW APPLIED
(2019)
Article
Nanoscience & Nanotechnology
Hung- Lin, Hsiang-Yao Tan, Yu-Ming Liao, Kun-Ching Shen, Mikhail Y. Shalaginov, Monika Kataria, Chih-Ting Chen, Jun-Wei Chang, Yang-Fang Chen
Summary: The study introduces a grating collageable HMM that enhances light-matter interaction and improves laser action through QDs and grating nanostructure. This HMM has various advantages and can be utilized in different applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Electrochemistry
Wenhan Cai, Lingya Yu, Chun-Yu Lee, Lilin Wang, Shujing Sun, Kun-Ching Shen, Chenlong Chen
Summary: This study demonstrates a strategy for the natural growth of serrated GaN nanowires on a LiGaO2 substrate. These serrated GaN nanowires exhibit a higher photocurrent density compared to GaN films, and also show high stability in photoresponse and photocurrent.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2022)
Article
Chemistry, Multidisciplinary
Nanzheng Ji, He Chen, Lilin Wang, Chun-Yu Lee, Kun-Ching Shen, Shujing Sun, Chenlong Chen
Summary: This study demonstrates a straightforward chemical vapor deposition technique for the growth of three-dimensional cross-linked comb-like ZnO arrays. The researchers propose a cooperative growth mechanism to construct this unique structure. The development of such a 3D cross-linked array is of great significance for gas-sensitive devices, optoelectronics, and quantum electrical information applications.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Engineering, Electrical & Electronic
Hung-I Lin, Chun-Che Wang, Kun-Ching Shen, Mikhail Y. Shalaginov, Pradip Kumar Roy, Krishna Prasad Bera, Monika Kataria, Christy Roshini Paul Inbaraj, Yang-Fang Chen
NPJ FLEXIBLE ELECTRONICS
(2020)
