Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3

Radiation sustenance of HfO2/β-Ga2O3 metal-oxide-semiconductor capacitors: Gamma irradiation study

(2020) N. Manikanthababu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Neutron Irradiation and Forming Gas Anneal Impact on β-Ga2O3 Deep Level Defects

(2020) Hantian Gao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg

(2019) A. Luchechko et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

(2019) B. R. Tak et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection

(2019) Ming-Ming Fan et al.   APPLIED SURFACE SCIENCE

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

(2019) Esmat Farzana et al.   APL Materials

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

(2018) Jonathan Lee et al.   APPLIED PHYSICS LETTERS

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

(2018) N. Manikanthababu et al.   APPLIED PHYSICS LETTERS

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

(2018) A. Y. Polyakov et al.   APPLIED PHYSICS LETTERS

Iron and intrinsic deep level states in Ga2O3

(2018) M. E. Ingebrigtsen et al.   APPLIED PHYSICS LETTERS

Guest Editorial: The dawn of gallium oxide microelectronics

(2018) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Point Defects Induced Work Function Modulation of β-Ga2O3

(2018) B.R. Tak et al.   APPLIED SURFACE SCIENCE

Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

(2018) Esmat Farzana et al.   APL Materials

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

(2018) M. E. Ingebrigtsen et al.   APL Materials

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

(2017) T. Paul Chow et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

(2016) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

(2016) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Current status of Ga2O3power devices

(2016) Masataka Higashiwaki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gallium Oxide and Related Semiconductors

(2016)   JAPANESE JOURNAL OF APPLIED PHYSICS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Synthesis of wide bandgap Ga2O3(Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition

(2015) Subrina Rafique et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag14+ ions

(2014) Ashish Kumar et al.   APPLIED PHYSICS LETTERS

Review of radiation damage in GaN-based materials and devices

(2013) Stephen J. Pearton et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Characterization of oxygen deficient gallium oxide films grown by PLD

(2012) A. Petitmangin et al.   APPLIED SURFACE SCIENCE

In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 $\hbox{MeV Ni}^{+7}$ Ion Irradiation

(2012) Shammi Verma et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Defect formation in GaN epitaxial layers due to swift heavy ion irradiation

(2011) Ashish Kumar et al.   Radiation Effects and Defects in Solids

SRIM – The stopping and range of ions in matter (2010)

(2010) James F. Ziegler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Electronic properties of the EC-0.6 eV electron trap in n-type GaN

(2008) Julien Pernot et al.   JOURNAL OF APPLIED PHYSICS