Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
Published 2018 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3
Authors
Keywords
-
Journal
APL Materials
Volume 7, Issue 2, Pages 022510
Publisher
AIP Publishing
Online
2018-12-14
DOI
10.1063/1.5054826
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Structure and vibrational properties of the dominant O-H center in β-Ga2O3
- (2018) Philip Weiser et al. APPLIED PHYSICS LETTERS
- Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
- (2018) A. Y. Polyakov et al. APPLIED PHYSICS LETTERS
- Iron and intrinsic deep level states in Ga2O3
- (2018) M. E. Ingebrigtsen et al. APPLIED PHYSICS LETTERS
- Trapping Effects in Si $\delta$ -Doped $\beta$ -Ga2O3 MESFETs on an Fe-Doped $\beta$ -Ga2O3 Substrate
- (2018) Joe F. Mcglone et al. IEEE ELECTRON DEVICE LETTERS
- Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level
- (2017) L Vines et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
- (2016) Shihyun Ahn et al. APPLIED PHYSICS LETTERS
- Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
- (2016) Z. Zhang et al. APPLIED PHYSICS LETTERS
- Electrostatics-based finite-size corrections for first-principles point defect calculations
- (2014) Yu Kumagai et al. PHYSICAL REVIEW B
- First-principles calculations for point defects in solids
- (2014) Christoph Freysoldt et al. REVIEWS OF MODERN PHYSICS
- Development of gallium oxide power devices
- (2013) Masataka Higashiwaki et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Ab initiocalculations on the defect structure ofβ-Ga2O3
- (2013) T. Zacherle et al. PHYSICAL REVIEW B
- Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- (2012) Kohei Sasaki et al. Applied Physics Express
- Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
- (2011) K. Irmscher et al. JOURNAL OF APPLIED PHYSICS
- Hydrogenated cation vacancies in semiconducting oxides
- (2011) J B Varley et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Experimental electronic structure of In2O3and Ga2O3
- (2011) Christoph Janowitz et al. NEW JOURNAL OF PHYSICS
- Oxygen vacancies and donor impurities in β-Ga2O3
- (2010) J. B. Varley et al. APPLIED PHYSICS LETTERS
- Assessing the performance of recent density functionals for bulk solids
- (2009) Gábor I. Csonka et al. PHYSICAL REVIEW B
- FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations
- (2009) Christoph Freysoldt et al. PHYSICAL REVIEW LETTERS
- Hartree–Fock orbitals significantly improve the reaction barrier heights predicted by semilocal density functionals
- (2008) Benjamin G. Janesko et al. JOURNAL OF CHEMICAL PHYSICS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started