Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin film

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

(2020) W. Hamouda et al.   APPLIED PHYSICS LETTERS

Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping

(2019) Maxim G. Kozodaev et al.   JOURNAL OF APPLIED PHYSICS

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

(2019) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

(2018) Uwe Schroeder et al.   INORGANIC CHEMISTRY

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

(2018) Robin Materlik et al.   JOURNAL OF APPLIED PHYSICS

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

(2017) Fei Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Si Doped Hafnium Oxide-A “Fragile” Ferroelectric System

(2017) Claudia Richter et al.   Advanced Electronic Materials

Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films

(2017) Min Hyuk Park et al.   Nanoscale

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Cubic-Structured $\hbox{HfO}_{2}$ With Optimized Doping of Lanthanum for Higher Dielectric Constant

(2009) Wei He et al.   IEEE ELECTRON DEVICE LETTERS

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

(2009) Chang Yong Kang et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY