Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application
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Title
Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application
Authors
Keywords
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Journal
Electronics
Volume 9, Issue 8, Pages 1228
Publisher
MDPI AG
Online
2020-07-31
DOI
10.3390/electronics9081228
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