Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications

Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

(2020) Y. Q. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates

(2020) Guangnan Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

(2019) Minghua Zhu et al.   IEEE ELECTRON DEVICE LETTERS

Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits

(2019) Zhibo Guo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

(2018) Chia-Hsun Wu et al.   IEEE Journal of the Electron Devices Society

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

(2018) Elena Fabris et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

(2017) Hanxing Wang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiN x passivation

(2017) Zhiyuan Bai et al.   SOLID-STATE ELECTRONICS

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

(2016) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer

(2016) Zhili Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior

(2016) Sheikh Aamir Ahsan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

(2015) Kenichiro Tanaka et al.   APPLIED PHYSICS LETTERS

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

(2015) Zhili Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Characterization and Enhancement of High-Voltage Cascode GaN Devices

(2015) Xiucheng Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

(2013) Zhikai Tang et al.   IEEE ELECTRON DEVICE LETTERS

GaN on Si Technologies for Power Switching Devices

(2013) Masahiro Ishida et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Survey of Wide Bandgap Power Semiconductor Devices

(2013) Jose Millan et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

(2012) Susai Lawrence Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

(2012) Hyung-Seok Lee et al.   IEEE ELECTRON DEVICE LETTERS

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

(2010) Domenica Visalli et al.   APPLIED PHYSICS LETTERS

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

(2010) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

(2010) Eldad Bahat-Treidel et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

(2010) Eldad Bahat-Treidel et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES