Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 2, Pages 270-277Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2358534
Keywords
Avalanche; cascode; gallium nitride (GaN); high frequency; packaging; soft-switching; voltage distribution
Funding
- Power Management Consortium through the Center for Power Electronics Systems, Virginia Polytechnic Institute
- State University, Blacksburg, VA, USA
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Gallium nitride (GaN) devices are gathering momentum, with a number of recent market introductions for a wide range of applications such as point-of-load converters, OFF-line switching power supplies, battery chargers, and motor drives. This paper studies the basic characteristics of a 600 V cascode GaN switch, such as voltage distribution during the turn-ON and turn-OFF transition. The switching loss mechanism of the cascode GaN switch is analyzed in detail, including the impact of the package parasitic inductance in both hard-and soft-switching modes. A soft-switching 5 MHz boost converter is developed and shows the advantages and the potential of the cascode GaN.
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