Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 11, Pages 1128-1131Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2483760
Keywords
AlGaN/GaN high electron mobility transistor (HEMT); standard fluorine ion implantation; normally off
Categories
Funding
- Key Technologies Support Program of Jiangsu Province [BE2013002-2]
Ask authors/readers for more resources
This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation damage. The E-mode MIS-HEMTs exhibit a threshold voltage as high as +3.3 V with a maximum drain current over 200 mA/mm (250 mA/mm for depletion-mode MIS-HEMTs) and a high on/off current ratio of 10(9). Meanwhile, the E-mode MIS-HEMT dynamic R-ON is only 1.53 times larger than the static R-ON after off-state V-DS stress of 500 V.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available