Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories

Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

(2020) Yann Beilliard et al.   AIP Advances

Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor

(2020) Xiao-Di Huang et al.   IEEE ELECTRON DEVICE LETTERS

Operation of a silicon quantum processor unit cell above one kelvin

(2020) C. H. Yang et al.   NATURE

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

(2020) Furqan Zahoor et al.   Nanoscale Research Letters

Conduction mechanisms of TaN/HfOx/Ni memristors

(2019) Vitalii Voronkovskii et al.   Materials Research Express

Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays

(2019) H. S. Alagoz et al.   APPLIED PHYSICS LETTERS

The electronic interface for quantum processors

(2019) J.P.G. van Dijk et al.   MICROPROCESSORS AND MICROSYSTEMS

Nanoscale resistive switching memory devices: a review

(2019) Stefan Slesazeck et al.   NANOTECHNOLOGY

Resistive Random Access Memory: A Review of Device Challenges

(2019) Varshita Gupta et al.   IETE TECHNICAL REVIEW

Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications

(2019) Jong-Ho Bae et al.   IEEE ELECTRON DEVICE LETTERS

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

(2018) Bishnu Patra et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature

(2018) N. Andreeva et al.   AIP Advances

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

(2018) P. Galy et al.   IEEE Journal of the Electron Devices Society

A crossbar network for silicon quantum dot qubits

(2018) Ruoyu Li et al.   Science Advances

Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits

(2018) L. Petit et al.   PHYSICAL REVIEW LETTERS

Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics

(2017) Maria Trapatseli et al.   JOURNAL OF APPLIED PHYSICS

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

(2017) Hong-Yu Chen et al.   JOURNAL OF ELECTROCERAMICS

Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

(2016) Cesar Vaca et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low-Temperature Characteristics of HfOx-Based Resistive Random Access Memory

(2015) Runchen Fang et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar resistive switching from liquid helium to room temperature

(2015) S Blonkowski et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A two-qubit logic gate in silicon

(2015) M. Veldhorst et al.   NATURE

Cryogenic Control Architecture for Large-Scale Quantum Computing

(2015) J. M. Hornibrook et al.   Physical Review Applied

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

(2015) Ee Lim et al.   Electronics

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)

(2014) Ella Gale   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Silicon quantum electronics

(2013) Floris A. Zwanenburg et al.   REVIEWS OF MODERN PHYSICS

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

(2012) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS