Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

(2017) Mohammed Zackriya et al.   Scientific Reports

Intrinsic defect-mediated conduction and resistive switching in multiferroic BiFeO3 thin films epitaxially grown on SrRuO3 bottom electrodes

(2016) Ji Hye Lee et al.   APPLIED PHYSICS LETTERS

Nonstoichiometry, Structure, and Properties of BiFeO3 Films

(2016) Liv R. Dedon et al.   CHEMISTRY OF MATERIALS

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3thin films

(2015) Zeng-Xing Lu et al.   Chinese Physics B

Switchable diode-effect mechanism in ferroelectric BiFeO3 thin film capacitors

(2015) Hiroki Matsuo et al.   JOURNAL OF APPLIED PHYSICS

Phase-field modeling of switchable diode-like current-voltage characteristics in ferroelectric BaTiO3

(2014) Y. Cao et al.   APPLIED PHYSICS LETTERS

Resistive switching in $$\hbox {BiFeO}_3$$ BiFeO 3 -based heterostructures due to ferroelectric modulation on interface Schottky barriers

(2014) Dongxia Chen et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

(2014) Shinbuhm Lee et al.   APL Materials

Interfacial coupling in heteroepitaxial vertically aligned nanocomposite thin films: From lateral to vertical control

(2013) Wenrui Zhang et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

Strong oxygen pressure dependence of ferroelectricity in BaTiO3/SrRuO3/SrTiO3 epitaxial heterostructures

(2013) A. P. Chen et al.   JOURNAL OF APPLIED PHYSICS

Electrode interface control of the Schottky diode-like behavior in epitaxial Pb(Zr0.2Ti0.8)O3 thin films: A critical analysis

(2013) L. M. Hrib et al.   JOURNAL OF APPLIED PHYSICS

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

(2013) Yiping Guo et al.   NANOTECHNOLOGY

Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-δFeO3 Interfaces

(2012) Atsushi Tsurumaki et al.   ADVANCED FUNCTIONAL MATERIALS

Redox-Based Resistive Switching Memories

(2012) Rainer Waser   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Polarization-tuned diode behaviour in multiferroic BiFeO3thin films

(2012) Yingbang Yao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ferroelectric Tunnel Memristor

(2012) D. J. Kim et al.   NANO LETTERS

Reversible electrical switching of spin polarization in multiferroic tunnel junctions

(2012) D. Pantel et al.   NATURE MATERIALS

Theory of Space Charge Limited Currents

(2012) X.-G. Zhang et al.   PHYSICAL REVIEW LETTERS

Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

(2012) Xi Zou et al.   AIP Advances

A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

(2011) An Quan Jiang et al.   ADVANCED MATERIALS

High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3

(2011) Zhibo Yan et al.   ADVANCED MATERIALS

Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

(2011) Can Wang et al.   APPLIED PHYSICS LETTERS

Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory

(2011) El Mostafa Bourim et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Solid-state memories based on ferroelectric tunnel junctions

(2011) André Chanthbouala et al.   Nature Nanotechnology

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

(2011) D. Lee et al.   PHYSICAL REVIEW B

Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

(2011) H Elhadidy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Oxygen concentration and its effect on the leakage current in BiFeO3 thin films

(2010) H. Yang et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Electroresistance effects in ferroelectric tunnel barriers

(2010) D. Pantel et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Variation of leakage current mechanisms by ion substitution in BiFeO3 thin films

(2009) Zhiyong Zhong et al.   APPLIED PHYSICS LETTERS

Evidences for the depletion region induced by the polarization of ferroelectric semiconductors

(2009) Guo-Liang Yuan et al.   APPLIED PHYSICS LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

(2009) C.-H. Yang et al.   NATURE MATERIALS

Simulation of hysteresis loops for polycrystalline ferroelectrics by an extensive Landau-type model

(2009) Ying-Long Wang et al.   PHYSICS LETTERS A

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology