Switchable diode-effect mechanism in ferroelectric BiFeO3 thin film capacitors

Heavy Mn-doping effect on spontaneous polarization in ferroelectric BiFeO3thin films

(2015) Hiroki Matsuo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films

(2013) Jiagang Wu et al.   APPLIED PHYSICS LETTERS

Polarization-Induced Photovoltaic Effects in Nd-Doped BiFeO3Ferroelectric Thin Films

(2013) Yohei Ukai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

(2013) Yiping Guo et al.   NANOTECHNOLOGY

Beyond the barrier

(2013) E. Y. Tsymbal et al.   NATURE MATERIALS

Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-δFeO3 Interfaces

(2012) Atsushi Tsurumaki et al.   ADVANCED FUNCTIONAL MATERIALS

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

(2012) Daniel Pantel et al.   APPLIED PHYSICS LETTERS

Polarization-tuned diode behaviour in multiferroic BiFeO3thin films

(2012) Yingbang Yao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

(2012) R.K. Pan et al.   THIN SOLID FILMS

Mechanism of the Switchable Photovoltaic Effect in Ferroelectric BiFeO3

(2011) H. T. Yi et al.   ADVANCED MATERIALS

Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films

(2011) Can Wang et al.   APPLIED PHYSICS LETTERS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

(2011) D. Lee et al.   PHYSICAL REVIEW B

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Photovoltaic effects in BiFeO3

(2009) S. Y. Yang et al.   APPLIED PHYSICS LETTERS

Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

(2009) A. Gruverman et al.   NANO LETTERS

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

(2009) V. Garcia et al.   NATURE

Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

(2009) T. Choi et al.   SCIENCE

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

(2009) P. Maksymovych et al.   SCIENCE

Rectifying current-voltage characteristics of BiFeO3∕Nb-doped SrTiO3 heterojunction

(2008) H. Yang et al.   APPLIED PHYSICS LETTERS

Photoconductivity in BiFeO3 thin films

(2008) S. R. Basu et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today