Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

Pressure-Induced Structural Phase Transition and a Special Amorphization Phase of Two-Dimensional Ferromagnetic Semiconductor Cr2Ge2Te6

(2019) Zhenhai Yu et al.   Journal of Physical Chemistry C

Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

(2019) Seung Ik Oh et al.   Micromachines

Ultra-Low Program Current and Multilevel Phase Change Memory for High-Density Storage Achieved by a Low-Current SET Pre-Operation

(2019) Mingze He et al.   IEEE ELECTRON DEVICE LETTERS

Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization

(2018) Shogo Hatayama et al.   ACS Applied Materials & Interfaces

Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

(2018) Y. Shuang et al.   APPLIED PHYSICS LETTERS

Low temperature thin films for next-generation microelectronics (invited)

(2018) Jurriaan Schmitz   SURFACE & COATINGS TECHNOLOGY

Increasing the Atomic Packing Efficiency of Phase-Change Memory Glass to Reduce the Density Change upon Crystallization

(2018) Qianqian Wu et al.   Advanced Electronic Materials

Materials science and engineering of phase change random access memory

(2017) Syed Ghazi Sarwat   MATERIALS SCIENCE AND TECHNOLOGY

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

(2017) Lei Zhang et al.   Scientific Reports

n-Type doped transparent conducting binary oxides: an overview

(2016) Sebastian C. Dixon et al.   Journal of Materials Chemistry C

Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays

(2016) Rakesh Aluguri et al.   IEEE Journal of the Electron Devices Society

Microscopic Complexity in Phase-Change Materials and its Role for Applications

(2015) Volker L. Deringer et al.   ADVANCED FUNCTIONAL MATERIALS

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

(2015) Yoon Cheol Bae et al.   Scientific Reports

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3gate dielectric

(2014) Wen-Peng Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays

(2014) Rohit S Shenoy et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Overview of emerging nonvolatile memory technologies

(2014) Jagan Meena et al.   Nanoscale Research Letters

Optical response characteristics arising from delocalized electrons in phase change materials

(2012) H.W. Ho et al.   ACTA MATERIALIA

Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

(2012) V. S. S. Srinivasan et al.   IEEE ELECTRON DEVICE LETTERS

Role of vacancies in metal–insulator transitions of crystalline phase-change materials

(2012) W. Zhang et al.   NATURE MATERIALS

Heteroepitaxial La2−xSrxNiO4-Nb-Doped SrTiO3Junctions: Synthesis and Rectification Characteristics

(2011) Adrian Podpirka et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

(2010) Jiun-Jia Huang et al.   APPLIED PHYSICS LETTERS

Properties of TiO2-based transparent conducting oxides

(2010) Taro Hitosugi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE