Heteroepitaxial La2−xSrxNiO4-Nb-Doped SrTiO3Junctions: Synthesis and Rectification Characteristics

Thin film colossal dielectric constant oxide La2−xSrxNiO4: Synthesis, dielectric relaxation measurements, and electrode effects

(2011) Adrian Podpirka et al.   JOURNAL OF APPLIED PHYSICS

Effects of lattice strains on the interfacial potential in La0.67Ca0.33MnO3/SrTiO3:Nb heterojunctions

(2010) D. J. Wang et al.   APPLIED PHYSICS LETTERS

Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3Junctions

(2010) Chen Lei-Ming et al.   CHINESE PHYSICS LETTERS

Defect chemistry ofpnjunctions in complex oxides

(2010) Shimon Saraf et al.   PHYSICAL REVIEW B

An Emergent Change of Phase for Electronics

(2010) H. Takagi et al.   SCIENCE

Electrical transport properties of heteroepitaxial junction of charge-ordered and 0.5 wt% Nb doped

(2010) Guang Li et al.   SOLID STATE COMMUNICATIONS

Colossal dielectric constant up to gigahertz at room temperature

(2009) S. Krohns et al.   APPLIED PHYSICS LETTERS

Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3∕SrTi0.99Nb0.01O3 p-n heterojunctions

(2008) F. Y. Bruno et al.   APPLIED PHYSICS LETTERS

Capacitance characteristics of phase separated La0.5Ca0.5MnO3∕Nb–SrTiO3 p-n junction

(2008) B. T. Xie et al.   APPLIED PHYSICS LETTERS

Magnetic field tuning of interface electronic properties in manganite-titanate junctions

(2008) J. Matsuno et al.   APPLIED PHYSICS LETTERS

Enhancing Total Conductivity of La2NiO4+δ Epitaxial Thin Films by Reducing Thickness

(2008) Mónica Burriel et al.   Journal of Physical Chemistry C

Study of carrier behavior in La0.9Ba0.1MnO3−δ/SrTiO3:Nb p-n heterojunction

(2008) C. Wang et al.   THIN SOLID FILMS

Homoepitaxial diamond p–n+ junction with low specific on-resistance and ideal built-in potential

(2007) Toshiharu Makino et al.   DIAMOND AND RELATED MATERIALS