Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Published 2019 View Full Article
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Title
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Authors
Keywords
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Journal
JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT
Volume 2019, Issue 12, Pages 124026
Publisher
IOP Publishing
Online
2019-12-27
DOI
10.1088/1742-5468/ab5704
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