Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack

Title
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
Authors
Keywords
-
Journal
Publisher
IOP Publishing
Online
2019-12-27
DOI
10.1088/1742-5468/ab5704

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