标题
Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack
作者
关键词
-
出版物
JOURNAL OF STATISTICAL MECHANICS-THEORY AND EXPERIMENT
Volume 2019, Issue 12, Pages 124026
出版商
IOP Publishing
发表日期
2019-12-27
DOI
10.1088/1742-5468/ab5704
参考文献
相关参考文献
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