Low Schottky barrier contacts to 2H-MoS2 by Sn electrodes

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

(2018) Gwang-Sik Kim et al.   ACS Nano

Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

(2018) Riccardo Pisoni et al.   APPLIED PHYSICS LETTERS

Contact engineering for 2D materials and devices

(2018) Daniel S. Schulman et al.   CHEMICAL SOCIETY REVIEWS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

(2018) Amritesh Rai et al.   Crystals

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

(2017) Xu Cui et al.   NANO LETTERS

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

(2017) Nicolas Ubrig et al.   NANO LETTERS

Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS2 van der Waals Heterostructures

(2017) Riccardo Pisoni et al.   NANO LETTERS

Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

(2017) Junyoung Kwon et al.   Nanoscale

Ultrahigh sensitive MoTe2 phototransistors driven by carrier tunneling

(2016) Lei Yin et al.   APPLIED PHYSICS LETTERS

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

(2016) David Lloyd et al.   NANO LETTERS

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

Gate-induced superconductivity in atomically thin MoS2 crystals

(2016) Davide Costanzo et al.   Nature Nanotechnology

Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2

(2015) Naveen Kaushik et al.   ACS Applied Materials & Interfaces

Controlling many-body states by the electric-field effect in a two-dimensional material

(2015) L. J. Li et al.   NATURE

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Effect of disorder on Raman scattering of single-layerMoS2

(2015) Sandro Mignuzzi et al.   PHYSICAL REVIEW B

Light Generation and Harvesting in a van der Waals Heterostructure

(2014) Oriol Lopez-Sanchez et al.   ACS Nano

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

(2014) Lili Yu et al.   NANO LETTERS

Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

(2014) Britton W. H. Baugher et al.   Nature Nanotechnology

The valley Hall effect in MoS2 transistors

(2014) K. F. Mak et al.   SCIENCE

High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts

(2013) André Dankert et al.   ACS Nano

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

Controlled, Defect-Guided, Metal-Nanoparticle Incorporation onto MoS2 via Chemical and Microwave Routes: Electrical, Thermal, and Structural Properties

(2013) T. S. Sreeprasad et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2

(2013) C. Rice et al.   PHYSICAL REVIEW B

Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2

(2013) C. R. Zhu et al.   PHYSICAL REVIEW B

Raman Spectroscopy Study of Lattice Vibration and Crystallographic Orientation of Monolayer MoS2under Uniaxial Strain

(2013) Yanlong Wang et al.   Small

Hopping transport through defect-induced localized states in molybdenum disulphide

(2013) Hao Qiu et al.   Nature Communications

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

Superconducting Dome in a Gate-Tuned Band Insulator

(2012) J. T. Ye et al.   SCIENCE

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Electron Transport in Disordered Graphene Nanoribbons

(2010) Melinda Y. Han et al.   PHYSICAL REVIEW LETTERS