Effect of reset voltage polarity on the resistive switching region of unipolar memory
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Effect of reset voltage polarity on the resistive switching region of unipolar memory
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 212, Issue 10, Pages 2255-2261
Publisher
Wiley
Online
2015-07-02
DOI
10.1002/pssa.201532235
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments
- (2014) L. Zhang et al. APPLIED PHYSICS LETTERS
- Characteristics of gadolinium oxide resistive switching memory with Pt–Al alloy top electrode and post-metallization annealing
- (2013) Jer-Chyi Wang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Resistive switching characteristics of nickel silicide layer embedded HfO2 film
- (2012) Debashis Panda et al. APPLIED PHYSICS LETTERS
- Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$:Cu/Pt RRAM Device
- (2011) Yingtao Li et al. IEEE ELECTRON DEVICE LETTERS
- Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance
- (2011) Z. Q. Wang et al. IEEE ELECTRON DEVICE LETTERS
- Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
- (2011) D. Ielmini et al. JOURNAL OF APPLIED PHYSICS
- Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
- (2011) D Ielmini et al. NANOTECHNOLOGY
- Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
- (2010) Min-Chen Chen et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
- (2010) Z Q Wang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode
- (2009) Hangbing Lv et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of room temperature grown SnO2 thin films
- (2009) Kazuki Nagashima et al. APPLIED PHYSICS LETTERS
- Effects of metal electrodes on the resistive memory switching property of NiO thin films
- (2008) C. B. Lee et al. APPLIED PHYSICS LETTERS
- Addressing Cu/Low-$k$ Dielectric TDDB-Reliability Challenges for Advanced CMOS Technologies
- (2008) Fen Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More