Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
出版年份 2019 全文链接
标题
Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
作者
关键词
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出版物
Electronics
Volume 8, Issue 10, Pages 1087
出版商
MDPI AG
发表日期
2019-09-26
DOI
10.3390/electronics8101087
参考文献
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