Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5

Realistic Atomistic Structure of Amorphous Silicon from Machine-Learning-Driven Molecular Dynamics

(2018) Volker L. Deringer et al.   Journal of Physical Chemistry Letters

Intrinsic charge trapping in amorphous oxide films: status and challenges

(2018) Jack Strand et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Origin of radiation tolerance in amorphous Ge2Sb2Te5phase-change random-access memory material

(2018) Konstantinos Konstantinou et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Collective Structural Relaxation in Phase-Change Memory Devices

(2018) Manuel Le Gallo et al.   Advanced Electronic Materials

Modeling the Phase-Change Memory Material, Ge2Sb2Te5, with a Machine-Learned Interatomic Potential

(2018) Felix C. Mocanu et al.   JOURNAL OF PHYSICAL CHEMISTRY B

Ab initio computer simulations of non-equilibrium radiation-induced cascades in amorphous Ge2Sb2Te5

(2018) Konstantinos Konstantinou et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

(2017) Pierre Noé et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

(2016) Saikat Mukhopadhyay et al.   Scientific Reports

Gaussian approximation potentials: A brief tutorial introduction

(2015) Albert P. Bartók et al.   INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY

Microscopic origin of resistance drift in the amorphous state of the phase-change compound GeTe

(2015) S. Gabardi et al.   PHYSICAL REVIEW B

Aging mechanisms in amorphous phase-change materials

(2015) Jean Yves Raty et al.   Nature Communications

Changes in electrical transport and density of states of phase change materials upon resistance drift

(2014) Daniel Krebs et al.   NEW JOURNAL OF PHYSICS

Nature of intrinsic and extrinsic electron trapping in SiO2

(2014) Al-Moatasem El-Sayed et al.   PHYSICAL REVIEW B

Competing local orders in liquid and amorphous structures of Ge2Sb2Te5: Influence of exchange-correlation functional

(2013) Kye Yeop Kim et al.   JOURNAL OF APPLIED PHYSICS

Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys

(2013) J. Luckas et al.   JOURNAL OF APPLIED PHYSICS

Defects in amorphous phase-change materials

(2013) Jennifer Luckas et al.   JOURNAL OF MATERIALS RESEARCH

On representing chemical environments

(2013) Albert P. Bartók et al.   PHYSICAL REVIEW B

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials

(2012) Daniel Krebs et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

(2011) M. Rizzi et al.   APPLIED PHYSICS LETTERS

Non-resistance-based cell-state metric for phase-change memory

(2011) Abu Sebastian et al.   JOURNAL OF APPLIED PHYSICS

Amorphous Ge15Te85: density functional, high-energy x-ray and neutron diffraction study

(2011) J Kalikka et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. II. The intrinsic electronic midgap states

(2010) Andriy Zhugayevych et al.   JOURNAL OF CHEMICAL PHYSICS

Auxiliary Density Matrix Methods for Hartree−Fock Exchange Calculations

(2010) Manuel Guidon et al.   Journal of Chemical Theory and Computation

Gaussian Approximation Potentials: The Accuracy of Quantum Mechanics, without the Electrons

(2010) Albert P. Bartók et al.   PHYSICAL REVIEW LETTERS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Robust Periodic Hartree−Fock Exchange for Large-Scale Simulations Using Gaussian Basis Sets

(2009) Manuel Guidon et al.   Journal of Chemical Theory and Computation

First-principles study of crystalline and amorphous Ge2Sb2Te5and the effects of stoichiometric defects

(2009) S Caravati et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

(2009) D. Ielmini et al.   MICROELECTRONIC ENGINEERING

Nature of Atomic Bonding and Atomic Structure in the Phase-ChangeGe2Sb2Te5Glass

(2009) M. Xu et al.   PHYSICAL REVIEW LETTERS

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Threshold switching and phase transition numerical models for phase change memory simulations

(2008) A. Redaelli et al.   JOURNAL OF APPLIED PHYSICS

Density functional study of amorphous, liquid and crystalline Ge2Sb2Te5: homopolar bonds and/or AB alternation?

(2008) J Akola et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

(2008) J. Hegedüs et al.   NATURE MATERIALS

Phase-change memories

(2008) Andrea L. Lacaita et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Local order in amorphousGe2Sb2Te5andGeSb2Te4

(2008) P. Jóvári et al.   PHYSICAL REVIEW B