Role of mechanical stress in the resistance drift of Ge2Sb2Te5 films and phase change memories

Physical origin of the resistance drift exponent in amorphous phase change materials

(2011) Mattia Boniardi et al.   APPLIED PHYSICS LETTERS

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

(2010) Mukut Mitra et al.   APPLIED PHYSICS LETTERS

Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphousGe2Sb2Te5

(2010) Jino Im et al.   PHYSICAL REVIEW B

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

(2009)   APPLIED PHYSICS LETTERS

Dependence of resistance drift on the amorphous cap size in phase change memory arrays

(2009) Stefania Braga et al.   APPLIED PHYSICS LETTERS

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory

(2008) Il-Mok Park et al.   THIN SOLID FILMS