Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys

Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

(2012) Chiyui Ahn et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Physical origin of the resistance drift exponent in amorphous phase change materials

(2011) Mattia Boniardi et al.   APPLIED PHYSICS LETTERS

The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments

(2011) Jennifer Luckas et al.   JOURNAL OF APPLIED PHYSICS

Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses

(2009) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

(2009) M. Boniardi et al.   JOURNAL OF APPLIED PHYSICS

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS