Defects in amorphous phase-change materials

Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys

(2013) J. Luckas et al.   JOURNAL OF APPLIED PHYSICS

Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

(2012) P. Fantini et al.   APPLIED PHYSICS LETTERS

Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials

(2012) Daniel Krebs et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Design Rules for Phase-Change Materials in Data Storage Applications

(2011) Dominic Lencer et al.   ADVANCED MATERIALS

The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments

(2011) Jennifer Luckas et al.   JOURNAL OF APPLIED PHYSICS

Bonding origin of optical contrast in phase-change memory materials

(2010) B. Huang et al.   PHYSICAL REVIEW B

Anomalous Hall effect

(2010) Naoto Nagaosa et al.   REVIEWS OF MODERN PHYSICS

Threshold field of phase change memory materials measured using phase change bridge devices

(2009) Daniel Krebs et al.   APPLIED PHYSICS LETTERS

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

(2009) M. Boniardi et al.   JOURNAL OF APPLIED PHYSICS

The influence of hopping on modulated photoconductivity

(2009) C Longeaud et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5

(2008) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Threshold switching and phase transition numerical models for phase change memory simulations

(2008) A. Redaelli et al.   JOURNAL OF APPLIED PHYSICS

Resonant bonding in crystalline phase-change materials

(2008) Kostiantyn Shportko et al.   NATURE MATERIALS